PART |
Description |
Maker |
K3362TC360 |
6604 A, 3600 V, SCR
|
WESTCODE SEMICONDUCTORS LTD
|
R295CH36DF3 R295CH36DY5 |
1755 A, 3600 V, SCR
|
WESTCODE SEMICONDUCTORS LTD
|
SMP6LC08-2P-T7 |
3600 W, BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE SOP-16
|
ProTek Devices
|
SM3436-40L |
3400-3600 MHz 10 Watt Ultra Linear Power Amplifier
|
Stealth Microwave, Inc.
|
TLP1210SATG |
12 outlet, 10-ft cord, 3600 joules, 2-line coax, 1-line RJ11/RJ45 combo protection Eco Home/Business
|
List of Unclassifed Manufacturers
|
R720366XXWA R5010210XXWA R9G00822XXWA R9G00622XXWA |
600 A, 3600 V, SILICON, RECTIFIER DIODE 100 A, 200 V, SILICON, RECTIFIER DIODE 2200 A, 800 V, SILICON, RECTIFIER DIODE 2200 A, 600 V, SILICON, RECTIFIER DIODE 2200 A, 400 V, SILICON, RECTIFIER DIODE 450 A, 150 V, SILICON, RECTIFIER DIODE 550 A, 50 V, SILICON, RECTIFIER DIODE 550 A, 150 V, SILICON, RECTIFIER DIODE 2500 A, 1300 V, SILICON, RECTIFIER DIODE 300 A, 900 V, SILICON, RECTIFIER DIODE 1800 A, 200 V, SILICON, RECTIFIER DIODE 1200 A, 3100 V, SILICON, RECTIFIER DIODE 2000 A, 2300 V, SILICON, RECTIFIER DIODE 3600 A, 2300 V, SILICON, RECTIFIER DIODE 100 A, 150 V, SILICON, RECTIFIER DIODE
|
POWEREX INC
|
2SC4666 |
High hFE: hFE = 600 3600 High collector current: IC = 150 mA (max)
|
TY Semiconductor Co., Ltd
|
CK-L09505M521 CK-L09505D521 CK-L09623M511 CK-R2273 |
9250 MHz - 9750 MHz RF/MICROWAVE ISOLATOR 8400 MHz - 10700 MHz RF/MICROWAVE ISOLATOR 21200 MHz - 24200 MHz RF/MICROWAVE ISOLATOR 3400 MHz - 3500 MHz RF/MICROWAVE ISOLATOR 3600 MHz - 4200 MHz RF/MICROWAVE ISOLATOR 5800 MHz - 7200 MHz RF/MICROWAVE ISOLATOR 4300 MHz - 5100 MHz RF/MICROWAVE ISOLATOR 17300 MHz - 19700 MHz RF/MICROWAVE ISOLATOR
|
FDK CORP
|
SUP65P06-20 SUB65P06-20 |
From old datasheet system P-Channel Enhancement-Mode Trans P-Channel 60-V (D-S), 175C MOSFET TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,65A I(D),TO-220AB P-Channel MOSFET 30V N-Channel PowerTrench MOSFET
|
VISAY[Vishay Siliconix] Vishay Intertechnology Inc Vishay Intertechnology,Inc.
|
UPA675T UPA675T-T1 UPA675T-T2 UPA675T-A |
100 mA, 16 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING N-channel enhancement type MOS FET
|
NEC
|
FDS8958B |
30V Dual N & P-Channel PowerTrenchMOSFET Dual N & P-Channel PowerTrench? MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ Dual N & P-Channel PowerTrench垄莽 MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 m楼? Q2-P-Channel: -30 V, -4.5 A, 51 m楼?
|
Fairchild Semiconductor
|
|