| PART |
Description |
Maker |
| EPM5130 |
(EPM5016 - EPM5192) High Speed High Density MAX 5000 Devices
|
Altera
|
| ADM1385 ADM1385ARS-REEL7 ADM3222 ADM3202 |
High-Speed, 3.3V, 2-Channel RS232/V.28 Interface Device with 460kBPS Data Rate and Shutdown and Enable Pins
High-Speed, 2-Channel RS232/V.28 Interface Devices
Low Power, 3.3 V, RS-232 Line Drivers/Receivers
|
Analog Devices
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| XC7SET04GV XC7SET04GW |
High-speed Si-gate CMOS devices, Inverting buffer
|
NXP Semiconductors
|
| M521 |
Positive Voltage Control of GaAs MMIC Control Devices
|
M/A-COM Technology Solutions, Inc.
|
| SHOR3D42 E007860 |
HIGH SPEED SWITCHING AND CONTROL APPLICATIONS
From old datasheet system
|
Toshiba
|
| HA16150P HA16150T |
High-Speed Current Mode Push-Pull PWM Control IC
|
Renesas Electronics Corporation
|
| 6ED1055-1 6ED1057-4 6ED1058 6ED1052-1 6ED1052-2 3T |
Monitoring and Control Devices
|
List of Unclassifed Manufacturers
List of Unclassifed Manufac...
List of Unclassifed Man...
|
| AN3338 |
In recent years the variable speed motor control market has required high performance
|
STMicroelectronics
|
| XC6209B33AD XC6212H59AD XC6209 XC6209_1 XC6209A31A |
High Speed LDO Regulator, Low ESR Cap. Compatible, Output ON/OFF Control
|
TOREX[Torex Semiconductor]
|
|
