| PART |
Description |
Maker |
| KLT-249414 |
1490nm InGaAsP strained MQW DFB LD for 1.25G TO CAN
|
KODENSHI KOREA CORP.
|
| KLT231544 |
1310nm InGaAsP strained MQW DFB-LD
|
KODENSHI KOREA CORP.
|
| KLT-231412 |
1310nm InGaAsP strained MQW DFB LD for 1.25G 2.0 TO CAN
|
KODENSHI KOREA CORP.
|
| NDL7565P1 NDL7103 NDL7113 NDL7153 NDL7163 NDL7502P |
InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION
InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION InGaAsP的应变量子阱的DC -异质结脉冲激光二极管模块1550nm的光时域反射应用
|
NEC[NEC]
NEC Corp.
NEC, Corp.
|
| NDL7553P NDL7565P1 NDL7103 NDL7113 NDL7153 NDL7163 |
InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION
|
NEC[NEC]
|
| NDL7553P_00 NDL7553P NDL7553P1 NDL7553P1C NDL7553P |
InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE FOR 1550 nm OTDR APPLICATION
|
NEC[NEC]
|
| NDL7564P NDL7103 NDL7113 NDL7153 NDL7163 NDL7502P |
Low Power 5V RS232 Dual Driver/Receiver with 0.1?碌F Capacitors; Package: SO; No of Pins: 16; Temperature Range: -40?掳C to 85?掳C
InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION InGaAsP的应变量子阱的DC -异质结脉冲激光二极管模块1310 OTDR的应
InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| ML7XX12 ML785B12 |
InGaAsP-MQW-FP LASER DIODES ARRATS
InGaAsP - MQW - FP LASER DIODE ARRAYS
|
Mitsubishi Electric Corporation
|
| NX7303CA-CC NX7303BA-CC NX7303BA |
InGaAsP MQW FP LASER DIODE IN COAXIAL PACKAGE FOR 155 Mb/s APPLICATION
1310 nm InGaAsP MQW FP LASER DIODE IN COAXIAL PACKAGE FOR 155 Mb/s APPLICATION
1310 nm InGaAsP MQW FP laser diode for 155 Mb/s applications. With SC-UPC connector. Vertical mount flange.
|
http://
CEL[California Eastern Labs]
NEC
|
| ML774F11F ML776H11F |
InGaAsP - MQW - DFB LASER DIODES
|
Mitsubishi Electric Corporation
|
| ML7924 ML7XX4 |
InGaAsP-MQW-DFB LASER DIODES
|
Mitsubishi Electric Corporation
|
