| PART |
Description |
Maker |
| KLT-255412 |
1550nm InGaAsP strained MQW DFB LD for 1.25G 2.0 TO CAN
|
KODENSHI KOREA CORP.
|
| KLT-255444 |
1550nm InGaAsP strained MQW 1.25Gbps DFB LD TO CAN
|
KODENSHI KOREA CORP.
|
| NX8563LB429 NX8563LB429-BA NX8563LB429-CA NX8563LB |
CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS 连续光源InGaAsP的应变量子阱激光器激光二极管模块D -波分复用应用
CONVERTER DC-DC 1W 5V/14V DUAL 连续光源InGaAsP的应变量子阱激光器激光二极管模块的D -波分复用应用
CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS 连续光源InGaAsP的应变量子阱激光器激光二极管模块的D -波分复用应用
ER 8C 8#12 SKT RECP LINE
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| NDL7910P NX8562LB |
1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE
|
NEC
|
| NDL7513P_00 NDL7513P NDL7513P1 NDL7513P1C NDL7513P |
InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE FOR 1310 nm OTDR APPLICATION
|
NEC[NEC]
|
| NDL7564P NDL7103 NDL7113 NDL7153 NDL7163 NDL7502P |
Low Power 5V RS232 Dual Driver/Receiver with 0.1?碌F Capacitors; Package: SO; No of Pins: 16; Temperature Range: -40?掳C to 85?掳C
InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION InGaAsP的应变量子阱的DC -异质结脉冲激光二极管模块1310 OTDR的应
InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| NDL7701P00 NDL7701P1 NDL7701P1C NDL7701P1D NDL7701 |
1550 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW-DFB DC-PBH LASER DIODE MODULE
|
NEC
|
| NDL7408P_00 NDL74081KC NDL74082KC NDL7408P1K NDL74 |
1310 nm InGaAsP STRAINED MQW DC-PBH LASER DIODE COAXIAL MODULE WITH SINGLE MODE FIBER
|
CEL[California Eastern Labs]
|
| NX8304CE-CC NX8304BE-CC NX8304BE |
NECs 1310 nm InGaAsP MQW-DFB LASER DIODE
InGaAsP MQW-DFB LASER DIODE IN COAXIAL PACKAGE FOR FIBER OPTIC COMMUNICATIONS
|
CEL[California Eastern Labs]
http://
|
| NX6508GK51 NX6508GH47 NX6508GH51 NX6508GH59 NX6508 |
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1510 nm (typ).
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1470 nm (typ).
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1590 nm (typ).
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1570 nm (typ).
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1490 nm (typ).
|
NEC
|
| NX6410GH NX6410GH-AZ |
1 490 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
InGaAsP MQW-DFB LASER DIODE
|
California Eastern Labs
|
