| PART |
Description |
Maker |
| NSS30070MR6T1G |
30 V, 0.7 A, Low VCE(sat) PNP Transistor(30V, 0.7A, 低VCE(sat) PNP晶体
|
ON Semiconductor
|
| 2SD1760 |
Low VCE(sat), VCE(sat) = 0.5V (typical) Collector-base voltage VCBO 60 V
|
TY Semiconductor Co., Ltd
|
| 2SB1424 |
Low VCE(sat). VCE(sat) = -0.2V (Typ.) (IC/IB = -2A / -0.1A) Excellent DC current gain characteristics.
|
TY Semiconductor Co., Ltd
|
| 30A02MH-TL-E |
Bipolar Transistor -30V, -0.7A, Low VCE(sat) PNP Single MCPH3
|
ON Semiconductor
|
| EN8210 |
Bipolar Transistor, -30V, -2A, Low VCE(sat), PNP Single MCPH3
|
ON Semiconductor
|
| EN7129C |
Bipolar Transistor (-)30V, (-)3A, Low VCE(sat), (PNP)NPN Single MCPH3
|
ON Semiconductor
|
| NSS20600CF8T1G NSS20600CF8 |
20V 6A LOW VCE(sat) PNP High Current Transistor ChipFET™
20 V, 7.0 A, Low VCE(sat) PNP Transistor(20V, 7.0A, 低VCE(sat) PNP晶体
|
ON Semiconductor
|
| IXGH28N60B |
Ultra Low VCE(sat) IGBT with Diode(VCES涓?00V锛?CE(sat)涓?.0V???缂??????朵?绠?甯?????锛?
|
IXYS CORP
|
| ENA1756A |
Bipolar Transistor 30V, 1.5A, Low VCE(sat) NPN Dual CPH6
|
ON Semiconductor
|
| IXGT31N60D1 IXGH31N60D1 |
Ultra-Low VCE(sat) IGBT with Diode(VCES00V，VCE(sat).7V的绝缘栅双极晶体带二极管)) 60 A, 600 V, N-CHANNEL IGBT, TO-247AD
Ultra-Low V IGBT with Diode
|
IXYS, Corp.
IXYS Corporation
|
| CMLM0605 CMLM0605BK |
200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
SMD Module PNP Low VCE(SAT) & Low VF Schottky Diode
MULTI DISCRETE MODULE⑩ SURFACE MOUNT LOW VCE (SAT) SILICON PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE
MULTI DISCRETE MODULE??SURFACE MOUNT LOW VCE (SAT) SILICON PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE
MULTI DISCRETE MODULE?/a> SURFACE MOUNT LOW VCE (SAT) SILICON PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE
|
CENTRAL[Central Semiconductor Corp]
|
