PART |
Description |
Maker |
MC-4516CB646EF-A10 MC-4516CB646EF-A80 MC-4516CB646 |
16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 DIMM-168 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
NEC, Corp. NEC Corp.
|
MC-4516CA727XF-A75 MC-4516CA727PF-A75 MC-4516CA727 |
16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
Elpida Memory
|
UPD4416001G5-A17-9JF UPD4416001G5-A15-9JF UPD44160 |
16M X 1 STANDARD SRAM, 15 ns, PDSO54 16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT 1,600位CMOS快速静态存储器1,600 - Word1
|
NEC, Corp. NEC Corp. NEC[NEC]
|
UPD23C128000BL UPD23C128000BLGX UPD23C128000BLGX-X |
128M-BIT MASK-PROGRAMMABLE ROM 16M-WORD BY 8-BIT (BYTE MODE) / 8M-WORD BY 16-BIT (WORD MODE)
|
NEC
|
UPD23C128040BL UPD23C128040BLGX UPD23C128040BLGX-X |
128M-BIT MASK-PROGRAMMABLE ROM 16M-WORD BY 8-BIT (BYTE MODE) / 8M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE
|
NEC
|
MC-4516CA727XFA-A75 MC-4516CA727XFA |
16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE 1,60072位同步动态随机存储器模块无缓冲型 CAP 1.5UF 600VDC POLY FILM AXIAL
|
Elpida Memory, Inc.
|
M5M4V16169DRT-10 M5M4V16169DRT-15 M5M4V16169DRT-7 |
16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|
M5M4V16169DTP-10 M5M4V16169DTP-7 M5M4V16169DTP-8 M |
16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MR27V12850L |
8M.Word × 16.Bit or 16M.Word × 8.Bit Page mode P2ROM
|
List of Unclassifed Manufacturers
|
MR27T25603L-XXXTM MR27T25603L |
16M-Word x 16-Bit or 32M-Word x 8-Bit P2ROM
|
OKI[OKI electronic componets]
|
MR27V1652E MR27V1652EMA MR27V1652ERA MR27V1652ETN |
1,048,576 - Word x 16-Bit or 2,097-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
|
OKI electronic componets
|
MR27V12850L-XXXTN MR27V12850L |
8M-Word x 16-Bit or 16M-Word x 8-Bit P2ROM
|
OKI[OKI electronic componets]
|