| PART |
Description |
Maker |
| 2N2905A |
HIGH SPEED MEDIUM POWER PNP SWITCHING TRANSISTOR 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39
High Speed, Saturated Switch PNP Silicon Transistor(高速、饱和开关型PNP硅晶体管) 高速，饱和硅晶体管开关进步党（高速，饱和开关型进步党硅晶体管）
|
TT electronics Semelab, Ltd.
STMicroelectronics N.V.
SEME-LAB[Seme LAB]
|
| OC70 OC75 OC66 2N217 OC74 OC65 OC73 OC76 OC77 OC78 |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 50MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 10MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 150MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 300MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 300MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 250MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 200MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 50MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 10V V(BR)CEO | 50MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 500MA I(C) | TO-5
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | TO-5
TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 500MA I(C) | TO-5
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | TO-5
68HC11/Bidirectional-Compatible µP Reset Circuit
TRANSISTOR | BJT | PNP | 18V V(BR)CEO | 500MA I(C) | TO-5 晶体管|晶体管|进步党| 18V的五（巴西）总裁| 500mA的一（c）|
|
APEM SA
|
| BC327-16 BC328-16 BC327 BC327-25 BC327-40 BC328-40 |
Si-Epitaxial PlanarTransistors 800 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE/ SWITCHING)
Amplifier Transistors(PNP)
PNP general purpose transistor
|
KEC(Korea Electronics)
Diotec Semiconductor AG
DIOTEC[Diotec Semiconductor]
Motorola Inc
Philips Semiconductors
|
| MMBT589LT1 MMBT589LT1_D ON2127 |
From old datasheet system
30 Volts 2.0 Amps PNP Transistor
High Current Surface Mount PNP Silicon Switching Transistor
|
ON Semiconductor
Motorola, Inc
|
| 2N3637 2N36342 2N3635 2N3634UB 2N3634L JANTXV2N363 |
PNP SILICON SWITCHING TRANSISTOR
1000 mA, 140 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5
|
Microsemi Corporation
MICROSEMI CORP-LAWRENCE
|
| 2SA1129 2SA1129-S 2SA1129-Z 2SA1129-AZ |
7 A, 30 V, PNP, Si, POWER TRANSISTOR, TO-220AB MP-25, 3 PIN
From old datasheet system
PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
Silicon transistor
|
Panasonic Semiconductor
NEC
|
| 2SB1578 2SB1578GB2 2SB1578GB1 2SB1578-GB3 |
5 A, 60 V, PNP, Si, POWER TRANSISTOR
3-Pin, Ultra-Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 5A条一（c）|43VAR
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-243VAR 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 5A条一（c）|43VAR
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
Low freq. power amp., medium-speed switching transistor
|
NEC, Corp.
Panasonic Semiconductor
|
| 2SB1018A |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS.
PNP transistor
|
TOSHIBA
N/A
|
| 2SB905 2SB905O 2SB905RSM 2SB905OSM 2SB905YSM |
RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS 抗辐射高效，5安培开关稳压器
TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 1.5A I(C) | TO-252AA
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications
|
Panasonic, Corp.
TOSHIBA
|
| ZXT10P20DE6 ZXT10P20DE6TA ZXT10P20DE6TC |
PNP Low Sat Transistor
20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
|
ZETEX[Zetex Semiconductors]
Diodes Incorporated
|
