PART |
Description |
Maker |
UPD42S16100LLA-A80 UPD42S16100LG3-A80-7JD UPD42S17 |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM 18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM 9-Mbit (256K x 32) Pipelined DCD Sync SRAM 9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM x1 Fast Page Mode DRAM x1快速页面模式的DRAM
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TOKO, Inc. EPCOS AG
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CY7C1303BV18-100BZC CY7C1306BV18-100BZC CY7C1303BV |
18-Mbit Burst of 2 Pipelined SRAM with QD(TM) Architecture 18-Mbit Burst of 2 Pipelined SRAM with QDR Architecture 18-Mbit Burst of 2 Pipelined SRAM with QDR垄芒 Architecture 18-Mbit Burst of 2 Pipelined SRAM with QDR?Architecture
|
Cypress Semiconductor
|
CY7C1304CV25-100BZC CY7C1304CV25-167BZC CY7C1304CV |
9-Mbit Burst of 4 Pipelined SRAM with QDR(TM)Architecture 9-Mbit Burst of 4 Pipelined SRAM with QDR垄芒 Architecture 9-Mbit Burst of 4 Pipelined SRAM with QDR Architecture 9-Mbit Burst of 4 Pipelined SRAM with QDR?/a> Architecture
|
Cypress Semiconductor
|
CY7C1305BV18-167BZC CY7C1307BV18-167BZC CY7C1305BV |
18-Mbit Burst of 4 Pipelined SRAM with QDR Architecture
|
Cypress Semiconductor
|
CY7C1302DV25 CY7C1302DV25-167 CY7C1302DV25-100 CY7 |
9-Mbit Burst of Two Pipelined SRAMs with QDR(TM) Architecture 9-Mbit Burst of Two Pipelined SRAMs with QDR Architecture
|
CYPRESS[Cypress Semiconductor]
|
CY7C1307BV25-167BZXC CY7C1305BV25-167BZXC |
18-Mbit Burst of 4 Pipelined SRAM with QDR?Architecture
|
Cypress Semiconductor
|
CY7C1307BV25-167BZC |
18-Mbit Burst of 4 Pipelined SRAM with QDR⑩ Architecture
|
Cypress Semiconductor
|
CY7C1303AV25-100BZC CY7C1306AV25-100BZC CY7C1303AV |
Memory : Sync SRAMs 18-Mb Burst of 2 Pipelined SRAM with QDR(TM) Architecture 18-Mb Burst of 2 Pipelined SRAM with QDR⑩ Architecture 18-Mb Burst of 2 Pipelined SRAM with QDR Architecture 18-Mb Burst of 2 Pipelined SRAM with QDR?/a> Architecture
|
Cypress Semiconductor
|
IDT71V3558SA133PFGI IDT71V3558SA100BGG IDT71V3558S |
3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/3.3V I/O 128K x 36/ 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O/ Burst Counter Pipelined Outputs 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 5 ns, PQFP100 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 4.2 ns, PQFP100 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs 128K的3656 × 18 3.3同步ZBT SRAM.3V的I / O的脉冲计数器输出流水 TV 6C 6#12 SKT WALL RECP Circular Connector; No. of Contacts:41; Series:D38999; Body Material:Metal; Connecting Termination:Crimp; Connector Shell Size:21; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:21-41
|
IDT Integrated Device Technology, Inc.
|
M36LLR8760B1 M36LLR8760M1 M36LLR8760TT M36LLR8760D |
256 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
|
意法半导 STMicroelectronics ST Microelectronics
|
K7A403200M-16 K7A403200M K7A403200M-10 K7A403200M- |
128K x 32-Bit Synchronous Pipelined Burst SRAM Rev. 5.0 (DEC. 1999) 128Kx32-Bit Synchronous Pipelined Burst SRAM
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Samsung Electronic SAMSUNG[Samsung semiconductor]
|