| PART |
Description |
Maker |
| CY7C1316BV18 CY7C1318BV18 CY7C1916BV18 CY7C1320BV1 |
18-Mbit DDR-II SRAM 2-Word Burst Architecture(2字Burst结构,18-Mbit DDR-II SRAM) 18兆位的DDR - II SRAM字突发架构（2字突发结18 -兆位的DDR - II SRAM的）
18-Mbit DDR-II SRAM 2-Word Burst Architecture(2瀛?urst缁??,18-Mbit DDR-II SRAM)
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C1992CV18-200BZC CY7C1992CV18-200BZI CY7C1992CV |
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
512K X 36 DDR SRAM, 0.45 ns, PBGA165
|
CYPRESS SEMICONDUCTOR CORP
|
| CY7C1420BV18-250BZC |
36-Mbit DDR-II SRAM 2-Word Burst Architecture 1M X 36 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| GS8662T18GE-267 |
72Mb SigmaCIO DDR-II Burst of 2 SRAM 4M X 18 DDR SRAM, 0.45 ns, PBGA165
|
GSI Technology, Inc.
|
| HM66AEB18202 HM66AEB36102BP-40 HM66AEB18202BP-30 H |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| CY7C1429AV18 CY7C1422AV18 |
36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture(2字Burst结构36-Mbit DDR-II SIO SRAM) 36兆位的DDR - II二氧化硅的SRAM 2字突发架构（2字突发结36 -兆位的DDR - II二氧化硅的SRAM
36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture(2字Burst结构6-Mbit DDR-II SIO SRAM) 36兆位的DDR - II二氧化硅的SRAM 2字突发架构（2字突发结36 -兆位的DDR - II二氧化硅的SRAM
|
Cypress Semiconductor Corp.
|
| GS8662D09E-333I GS8662D08E GS8662D09GE-200I GS8662 |
72Mb SigmaQuad-II Burst of 4 SRAM 8M X 9 DDR SRAM, 0.45 ns, PBGA165
72Mb SigmaQuad-II Burst of 4 SRAM 72Mb SigmaQuad -Ⅱ的4 SRAM的突
72Mb SigmaQuad-II Burst of 4 SRAM 8M X 8 DDR SRAM, 0.45 ns, PBGA165
72Mb SigmaQuad-II Burst of 4 SRAM 8M X 8 DDR SRAM, 0.5 ns, PBGA165
72Mb SigmaQuad-II Burst of 4 SRAM 8M X 9 DDR SRAM, 0.5 ns, PBGA165
|
GSI Technology, Inc.
|
| CY7C1520AV18-300BZC CY7C1520AV18-300BZI CY7C1520AV |
72-Mbit DDR-II SRAM 2-Word Burst Architecture 8M X 9 DDR SRAM, 0.5 ns, PBGA165
72-Mbit DDR-II SRAM 2-Word Burst Architecture 2M X 36 DDR SRAM, 0.45 ns, PBGA165
72-Mbit DDR-II SRAM 2-Word Burst Architecture 4M X 18 DDR SRAM, 0.45 ns, PBGA165
72-Mbit DDR-II SRAM 2-Word Burst Architecture 8M X 9 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| UPD44164082F5-E50-EQ1 UPD44164362F5-E50-EQ1 UPD441 |
18M-BIT DDRII SRAM 2-WORD BURST OPERATION 1800万位的SRAM 2条DDRII字爆发运
2M X 8 DDR SRAM, 0.45 ns, PBGA165
|
NEC, Corp.
|
| GS8662R09E-167I GS8662R09GE-167I GS8662R18GE-333I |
72Mb SigmaCIO DDR-II Burst of 4 SRAM 8M X 9 DDR SRAM, 0.5 ns, PBGA165
72Mb SigmaCIO DDR-II Burst of 4 SRAM 4M X 18 DDR SRAM, 0.45 ns, PBGA165
72Mb SigmaCIO DDR-II Burst of 4 SRAM 8M X 9 DDR SRAM, 0.45 ns, PBGA165
72Mb SigmaCIO DDR-II Burst of 4 SRAM 2M X 36 DDR SRAM, 0.45 ns, PBGA165
72Mb SigmaCIO DDR-II Burst of 4 SRAM 8M X 8 DDR SRAM, 0.45 ns, PBGA165
72Mb SigmaCIO DDR-II Burst of 4 SRAM 8M X 8 DDR SRAM, 0.5 ns, PBGA165
|
GSI Technology, Inc.
|
| GS8130219GE-333I GS8130207E-375IT |
4M X 18 DDR SRAM, 0.45 ns, PBGA165
16M X 8 DDR SRAM, 0.45 ns, PBGA165
|
GSI TECHNOLOGY
|
| NCP51510MNTWG |
3 Amp VTT Termination Source / Sink Regulator for DDR, DDR-2, DDR-3, DDR-4
|
ON Semiconductor
|
