| PART |
Description |
Maker |
| APT6010B2LL APT6010LLL APT6010LLLG APT6010B2LLG |
54 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
POWER MOS 7 MOSFET
|
Microsemi Corporation
|
| SPP04N60S5 |
Cool MOS Power Transistor(MOS 型功率晶体管) 4.5 A, 600 V, 0.95 ohm, N-CHANNEL, Si, POWER, MOSFET
|
SIEMENS AG
|
| APT20M22LVR APT20M22LVRG |
Power MOSFET; Package: TO-264 [L]; ID (A): 100; RDS(on) (Ohms): 0.022; BVDSS (V): 200; 100 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 100A 0.022 Ohm
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| IRLL024N IRLL024NPBF IRLL024NTR |
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
HEXFET Power MOSFET(HEXFET 功率MOS场效应管)
HEXFET Power MOSFET(HEXFET ???MOS?烘?搴??)
4.4 A, 55 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
|
IRF[International Rectifier]
|
| NP80N055PDG-E1B-AY NP80N055PDG-E2B-AY NP80N055MDG- |
MOS FIELD EFFECT TRANSISTOR
80 A, 55 V, 0.0066 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB LEAD FREE, MP-25ZP, TO-263, 3 PIN
SWITCHING N-CHANNEL POWER MOS FET
|
Renesas Electronics Corporation
|
| NP80N03KDE NP80N03KDE-E1-AY NP80N03KDE-E2-AY NP80N |
80 A, 30 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB LEAD FREE, MP-25ZJ, TO-263, 3 PIN
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
|
Pericom Semiconductor, Corp.
NEC
|
| NP80N06NLG NP80N06NLG-S18-AY NP80N06PLG NP80N06PLG |
MOS FIELD EFFECT TRANSISTOR
80 A, 60 V, 0.0083 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB LEAD FREE, MP-25ZP, TO-263, 3 PIN
SWITCHING N-CHANNEL POWER MOS FET
|
Renesas Electronics Corporation
Yuasa Battery, Inc.
|
| APT20M45BVFR |
56 A, 200 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
Power MOS V is a new generation of high voltage N-Channel enhancement
POWER MOS V 200V 56A 0.045 Ohm
|
MICROSEMI POWER PRODUCTS GROUP
ADPOW[Advanced Power Technology]
|
| K3296 2SK3296 2SK3296-ZK 2SK3296-ZJ 2SK3296-S |
TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,35A I(D),TO-220AB
MOS FIELD EFFECT TRANSISTOR
Power MOS FET
|
NEC Corp.
NEC[NEC]
|
| 2SJ603-S 2SJ603-ZJ 2SJ603-Z-AZ |
25 A, 60 V, 0.075 ohm, P-CHANNEL, Si, POWER, MOSFET
MOS FIELD EFFECT TRANSISTOR MOS场效应管
Pch power MOSFET 60V RDS(on)MAX=48m ohm TO-220AB,TO-262,TO-263
|
NEC, Corp.
NEC Corp.
|
| UPA1950 UPA1950TE UPA1950TE-T2 UPA1950TE-T1 |
2.5 A, 12 V, 0.205 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Pch enhancement-type MOS FET
|
NEC[NEC]
|
| APT10090SFLL APT10090BFLL APT10090BFLL_03 APT10090 |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET D3PAK-3
12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD TO-247, 3 PIN
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
|
