| PART |
Description |
Maker |
| 74HCT3G04GD125 74HC3G04GD125 |
Inverter; Package: SOT996-2 (XSON8U); Container: Reel Pack, Reverse, Reverse HC/UH SERIES, TRIPLE 1-INPUT INVERT GATE, PDSO8
|
NXP Semiconductors N.V.
|
| 74LVC1G34GW125 |
Single buffer; Package: SOT353-1 (TSSOP5); Container: Reel Pack, Reverse, Reverse LVC/LCX/Z SERIES, 1-INPUT NON-INVERT GATE, PDSO5
|
NXP Semiconductors N.V.
|
| HD-0125M3-GH HD-0155M3-IH HD-0195M3-DH HD-0195M3-D |
Stick Coupler
3 dB 90° Card Couplers
3 dB 90∑ Card Couplers
3 dB 90 Card Couplers
SCR-600VRM 10A
Bridge Rectifier; Repetitive Reverse Voltage Max, Vrrm:100V; Package/Case:TO-202; Current Rating:4A; Mounting Type:Through Hole
3 dB 90Card Couplers 3分贝90Σ卡耦合
SCR Thyristor; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:100V; On-State RMS Current, IT(rms):800mA; Peak Non Repetitive Surge Current, Itsm:8A; Gate Trigger Current Max, Igt:200uA 3分贝90Σ卡耦合
3 dB 90??Card Couplers
3 dB 90?Card Couplers
|
Hirose Electric USA, INC.
HIROSE ELECTRIC Co., Ltd.
HIROSE[Hirose Electric]
|
| IMC008FLSP |
8 MegaBaytes Series 2 Flash Memory Card(8M字节闪速存储器 4M X 16 FLASH 12V PROM CARD, 250 ns, XMA68
|
Intel, Corp.
|
| 74AUP1G885DC125 |
Low-power dual function gate; Package: SOT765-1 (VSSOP8); Container: Reel Pack, Reverse, Reverse AUP/ULP/V SERIES, DUAL 3-INPUT XOR GATE, PDSO8
|
NXP Semiconductors N.V.
|
| 74AUP2G00GD125 |
Low-power dual 2-input NAND gate; Package: SOT996-2 (XSON8U); Container: Reel Pack, Reverse, Reverse AUP/ULP/V SERIES, DUAL 2-INPUT NAND GATE, PDSO8
|
NXP Semiconductors N.V.
|
| HSMS-2800 HSMS-2802 HSMS-2803 HSMS-2804 HSMS-280C |
SURFACE MOUNT RF SCHOTTKY BARRIER DIODES
HSMS-2802 · Low reverse leakage Schottky diode
HSMS-2803 · Low reverse leakage Schottky diode
HSMS-2804 · Low reverse leakage Schottky diode
HSMS-2805 · Low reverse leakage Schottky diode
HSMS-2808 · Low reverse leakage Schottky diode
HSMS-280B · Low reverse leakage Schottky diode
HSMS-280C · Low reverse leakage Schottky diode
HSMS-280E · Low reverse leakage Schottky diode
HSMS-280F · Low reverse leakage Schottky diode
HSMS-280K · Low reverse leakage Schottky diode
HSMS-280L · Low reverse leakage Schottky diode
HSMS-280M · Low reverse leakage Schottky diode
HSMS-280N · Low reverse leakage Schottky diode
HSMS-280R · Low reverse leakage Schottky diode
|
http://
Agilent(Hewlett-Packard)
Agilent (Hewlett-Packard)
|
| 74AUP1G80 74AUP1G80GW 74AUP1G80GW125 74AUP1G80GM 7 |
Low-power D-type flip-flop; positive-edge trigger; Package: SOT353-1 (TSSOP5); Container: Reel Pack, Reverse, Reverse AUP/ULP/V SERIES, POSITIVE EDGE TRIGGERED D FLIP-FLOP, INVERTED OUTPUT, PDSO5
|
NXP Semiconductors N.V.
|
| SLE66C164P SLE66C164P-F7M5 SLE66C164P-T85C SLE66C1 |
Security & Chip Card ICs 安全
CONT BLOCK
Replacement Keys (2); Leaded Process Compatible:No; For Use With:Square D XB4 Series 22 mm Pushbutton Switches; Peak Reflow Compatible (260 C):No
SECURITY & CHIP CARD ICS
|
INFINEON[Infineon Technologies AG]
|
| 74AUP2G80GD125 74AUP2G80GM125 |
Low-power dual D-type flip-flop; positive-edge trigger; Package: SOT996-2 (XSON8U); Container: Reel Pack, Reverse, Reverse AUP/ULP/V SERIES, DUAL POSITIVE EDGE TRIGGERED D FLIP-FLOP, TRUE OUTPUT, PDSO8
Low-power dual D-type flip-flop; positive-edge trigger; Package: SOT902-1 (XQFN8U); Container: Reel Pack, Reverse, Reverse
|
NXP Semiconductors N.V.
|
| T10A120T T10A130B T10A200T T10A240T T10A270B |
T10A series SiBOD, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 108V,max. Ir = 50uA @ Vr = 120V,max, Tape and reeled (1500pcs).
T10A series SiBOD, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 117V,max. Ir = 50uA @ Vr = 130V,max, Bulk (500pcs).
T10A series SiBOD, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 180V,max. Ir = 50uA @ Vr = 200V,max, Tape and reeled (1500pcs).
T10A series SiBOD, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 216V,max. Ir = 50uA @ Vr = 240V,max, Tape and reeled (1500pcs).
T10A series SiBOD, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 243V,max. Ir = 50uA @ Vr = 270V,max, Bulk (500pcs).
|
Littelfuse
|
| IMC016FLSG |
5 V Series 200 Flash Memory Card(5V系列200闪速存储器插卡)
|
Intel Corp.
|
|
