PART |
Description |
Maker |
BD20112 BD203 |
SILCON EPITAXIAL-BASE POWER TRANSISTORS SILCON EPITAXIAL-BASE POWER TRANSISTORS
|
Comset Semiconductor
|
2SC943 |
NPN SILCON EPITAXIAL TRANSISTOR
|
New Jersey Semi-Conductor Products, Inc.
|
2N6290 2N6473 2N6476 2N6293 2N6110 2N6107 2N6108 2 |
EPITAXIAL-BASE/ SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS SMA FEMALE POWER DIVIDER; NUMBER OF OUTPUT PORTS: 4; FREQUENCY RANGE: 0.5 - 1 GHz; MINIMUM ISOLATION: 20 dB; VSWR: 1.30 MAXIMUM; MAXIMUM INSERTION EPITAXIAL-BASE SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
|
Boca Semiconductor Corp. BOCA[Boca Semiconductor Corporation]
|
1SV324 |
DIODE SILCON EPITAXIAL PLANAR TYPE
|
Toshiba Semiconductor
|
FZT692B |
NPN Silcon Planar Medium Power High Gain Transistor
|
Guangdong Kexin Industrial Co.,Ltd
|
BD944 |
(BD944 - BD948) Silicon Epitaxial Base Power Transistors
|
Magna
|
2N6246 2N6248 2N6247 2N6469 |
SILICON PNP EPITAXIAL BASE HIGH POWER TRANSISTORS
|
List of Unclassifed Manufacturers ETC[ETC]
|
MPS-A63 MPS-A64 |
SILCON DARLINGTON TRANSISTORS
|
List of Unclassifed Manufacturers ETC[ETC]
|
BDX20 |
PNP SILICON TRANSISTORS EPITAXIAL BASE
|
List of Unclassifed Manufacturers ETC Comset Semiconductors
|
2N3789 |
(2N3789 - 2N3792) EPITAXIAL-BASE TRANSISTORS
|
Comset Semiconductor
|