| PART |
Description |
Maker |
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| BLF4G20LS-110B |
From old datasheet system
UHF power LDMOS transistor 110 W LDMOS power transistor for base station applications at frequencies
|
Philips Semiconductors
NXP Semiconductors N.V.
|
| BLF6G22-180PN BLF6G22LS-180PN NXPSEMICONDUCTORSN.V |
180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz
Power LDMOS transistor BLF6G22LS-180PN<SOT539B (CDFM4)|<<http://www.nxp.com/packages/SOT539B.html<1<Always Pb-free,;BLF6G22LS-180PN<SOT539B (CDFM4)|<<http://www.nxp.com/packages/SOT539B.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| BLF7G27LS-100 BLF7G27L-100 |
Power LDMOS transistor
100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
|
NXP Semiconductors N.V.
|
| BLL6H0514-25 |
LDMOS driver transistor BLL6H0514-25<SOT467C (LDMOST)|<<http://www.nxp.com/packages/SOT467C.html<1<Always Pb-free,;
LDMOS driver transistor L BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
NXP Semiconductors N.V.
|
| PTF080601F PTF080601E PTF080601A PTF080601 |
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦，860-960兆赫
LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
|
INFINEON[Infineon Technologies AG]
|
| AFT20P060-4N |
RF Power LDMOS Transistor
|
Freescale Semiconductor, Inc
|
| LP80114 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
| LP702-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
| BLF2425M7L100-15 |
Power LDMOS transistor
|
NXP Semiconductors
|
| BLF8G10LS-270GV BLF8G10LS-270V |
Power LDMOS transistor
|
NXP Semiconductors
|
