| PART |
Description |
Maker |
| EDI88128CDXZI |
128Kx8 Monolithic SRAM, SMD 5962-89598
|
White Electronic Designs Corporation
|
| WMS128K8V-17 WMS128K8V-35 WMS128K8V-20DRMA WMS128K |
128Kx8 3.3V Monolithic SRAM(128Kx8,3.3V,单片静态RAM（存取时7ns
128Kx8 3.3单片的SRAM28Kx83.3伏，单片静态随机存储器（存取时间为35ns））
128K X 8 STANDARD SRAM, 20 ns, CDSO32 CERAMIC, SOJ-32
128K X 8 STANDARD SRAM, 15 ns, CDFP32 CERAMIC, DFP-32
128K X 8 STANDARD SRAM, 15 ns, CDSO32 CERAMIC, SOJ-32
128K X 8 STANDARD SRAM, 17 ns, CDIP32 SINGLE CAVITY, SIDE BRAZED, CERAMIC, DIP-32
128K X 8 STANDARD SRAM, 20 ns, CDFP32
|
White Electronic Designs Corporation
White Electronic Designs, Corp.
|
| WMF128K8-120CC5A WMF128K8-120CLC5A WMF128K8-120CM5 |
128Kx8 MONOLITHIC FLASH, SMD 5962-96690
|
WEDC[White Electronic Designs Corporation]
|
| WMF128K8-90FEC5A WMF128K8-90FEI5 WMF128K8-150DEM5 |
128Kx8 MONOLITHIC FLASH, SMD 5962-96690
|
White Electronic Designs Corporation
White Electronic Design...
|
| WMF128K8-120DEM5 WMF128K8-120FEM5 WMF128K8-120FFC5 |
150ns; 5V power supply; 128K x 8 monolitihic flash, SMD 5962-96690
120ns; 5V power supply; 128K x 8 monolitihic flash, SMD 5962-96690
EEPROM EEPROM
EEPROM|FLASH|128KX8|CMOS|DIP|32PIN|CERAMIC 的EEPROM | FLASH动画| 128KX8 |的CMOS |双酯| 32脚|陶瓷
EEPROM|FLASH|128KX8|CMOS|LLCC|32PIN|CERAMIC 的EEPROM | FLASH动画| 128KX8 |的CMOS | LLCC | 32脚|陶瓷
EEPROM|FLASH|128KX8|CMOS|FP|32PIN|CERAMIC 的EEPROM | FLASH动画| 128KX8 |的CMOS |计划生育| 32脚|陶瓷
EEPROM|FLASH|128KX8|CMOS|SOJ|32PIN|CERAMIC 的EEPROM | FLASH动画| 128KX8 |的CMOS | SOJ | 32脚|陶瓷
EEPROM|FLASH|128KX8|CMOS|SOP|32PIN|CERAMIC
60ns; 5V power supply; 128K x 8 monolitihic flash, SMD 5962-96690
70ns; 5V power supply; 128K x 8 monolitihic flash, SMD 5962-96690
90ns; 5V power supply; 128K x 8 monolitihic flash, SMD 5962-96690
|
White Electronic Designs
Mosel Vitelic, Corp.
International Rectifier, Corp.
TE Connectivity, Ltd.
KODENSHI, CORP.
Microchip Technology, Inc.
Century Container
|
| WMS512K8BV-20E WMS512K8BV-17E WMS512K8BV-17DEMEA W |
20ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM
17ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM
15ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM
512K X 8 STANDARD SRAM, 17 ns, CDSO32
512Kx8 Monolithic SRAM(512Kx8单片静态RAM（BiCMOS,存取时间17ns
512Kx8 Monolithic SRAM(512Kx8单片静态RAM（BiCMOS,存取时间20ns
|
White Electronic Designs Corporation
|
| EDI88512LPAXN36M EDI88512CAXNC EDI88512LPAXNI EDI8 |
512Kx8 Monolithic SRAM, SMD 5962-95600
|
http://
|
| LC361000ATLL-70X |
SRAM,128KX8,CMOS,TSSOP,32PIN,PLASTIC
From old datasheet system
|
Sanyo Semiconductor Corp
|
| KM681000BLP-7L |
SRAM,128KX8,CMOS,DIP,32PIN,PLASTIC
From old datasheet system
|
Samsung Electronics Inc
|
| KM681002C KM681002C-10 KM681002C-12 KM681002C-15 K |
128Kx8 Bit High-Speed CMOS Static RAM5V Operating. Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAM5V工作。在经营商业和工业温度范围
128K X 8 STANDARD SRAM, 20 ns, PDSO32
128K X 8 STANDARD SRAM, 10 ns, PDSO32
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| MMC9-65608EV-30-E MMDJ-65608EV-30-E 5962-8959818QT |
Rad. Tolerant 128Kx8, 5-Volt Very Low Power CMOS SRAM
Rad. Tolerant 128Kx8, 5-Volt Very Low Power CMOS SRAM
|
ATMEL Corporation
|
