| PART |
Description |
Maker |
| NX5315EH-AZ NX5315EK-AZ NX5315 |
NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS
|
CEL[California Eastern Labs]
|
| NX5315 NX5315EH-AZ NX5315EK-AZ |
NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS 邻舍1310纳米InGaAsP多量子阱FP激光二极管能为光纤到户无源光网络应用工具包
|
California Eastern Laboratories, Inc.
|
| NX5310EK-AZ NX5310 NX5310EH-AZ NX531006 |
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE
|
CEL[California Eastern Labs]
|
| NX6314EH |
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND 3 Gb/s BTS
|
California Eastern Labs
|
| NX6410GH |
LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
| NX6314EH |
LASER DIODE 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND 3 Gb/s BTS
|
Renesas Electronics Corporation
|
| DS1865 |
PON Triplexer Control and Monitoring Circuit
|
Maxim Integrated Products, Inc.
|
| FTM-9723P-KGHG FTM-9723P-KGH |
2x10 SFF G-PON OLT Transceiver
|
Source Photonics, Inc.
|
| G8931-04-15 |
Time response characteristics compatible with SONET and G/GE-PON
|
Hamamatsu Corporation
|
| DS1863E DS1863ER DS1863ET DS1863 DS26522 DS26522G |
Dual T1/E1/J1 Transceiver
Burst-Mode PON Controller With Integrated Monitoring
|
MAXIM[Maxim Integrated Products]
|
