| PART |
Description |
Maker |
| UPC2711TB1 |
5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER
|
NEC
|
| UPC3210TB UPC3210TB-E3 |
5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER
|
NEC[NEC]
|
| UPC2792TB-E3-A UPC2791TB UPC2791TB-E3 UPC2791TB-E3 |
5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER
|
CEL[California Eastern Labs]
|
| UPC3215TB UPC3215TB-E3 |
5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER 5伏，超级MINIMOLD硅单片宽带放大器
|
NEC, Corp.
NEC[NEC]
|
| UPC2762TB1 |
3 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS
|
NEC
|
| 2SC5012-15 |
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD
|
Renesas Electronics Corporation
|
| NEC66219 2SC5606-T1-A 2SC5606-A |
NPN SILICON RF TRANSISTOR FOR LOW NOISE ・ HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
|
California Eastern Labs
|
| UPA810TC UPA810TC-T1 UPA810 |
NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
|
NEC Corp.
NEC[NEC]
|
| 2SC5011 2SC5011-T1 2SC5011-15 |
NPN EPITAXIAL SILICON RF TRANSISTOR
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD
|
Renesas Electronics Corporation
|
| UPA831 UPA831TC UPA831TC-T1 UPA831TC-A |
2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE
|
NEC[NEC]
NEC Corp.
|
| NE3508M04-T2B-A |
S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HFET LEAD FREE, THIN, SUPER MINIMOLD PACKAGE-4
|
California Eastern Laboratories, Inc.
|
