| PART |
Description |
Maker |
| MTP20N10E |
Trans MOSFET N-CH 150V 20A 3-Pin(3 Tab) TO-220AB Rail
TMOS IV Power Field Effect Transistor
|
New Jersey Semiconductors
New Jersey Semi-Conductor P...
|
| AH5792 AH579210 AH5792-ZG-7 AH5792-YG-13 |
Single Phase Hall Effect Latch. Smart Fan Motor Controller
MAGNETIC FIELD SENSOR-HALL EFFECT, -5-5mT, 0.60-4.40V, RECTANGULAR, SURFACE MOUNT GREEN, SOT-553, 5 PIN
SINGLE PHASE HALL EFFECT LATCH SMART FAN MOTOR CONTROLLER
|
Diodes, Inc.
Diodes Inc.
Diodes Incorporated
|
| MCZ33937AEK_R2 MCZ33937AEK/R2 MCZ33937AEKR2 |
Three Phase Field Effect Transistor Pre-driver
|
Freescale Semiconductor, Inc
|
| MCZ33927EK/R2 MCZ33927EKR2 |
Three-Phase Field Effect Transistor Pre-Driver
0.8 A HALF BRDG BASED MOSFET DRIVER, PDSO54
|
Freescale Semiconductor, Inc
FREESCALE SEMICONDUCTOR INC
|
| AH1802-SNG-7 AH1802-FJG-7-01 AH1802-WG-7 AH1802-FY |
Micropower, Ultra-Sensitive Omnipolar Hall-Effect Switch
MAGNETIC FIELD SENSOR-HALL EFFECT, 1-4mT, 0.30V, RECTANGULAR, SURFACE MOUNT
MAGNETIC FIELD SENSOR-HALL EFFECT, 1-4mT, 0.30V, SQUARE, SURFACE MOUNT 2 X 2 MM, GREEN, DFN-6
|
Diodes, Inc.
Diodes Inc.
Diodes Incorporated
|
| MMBF2202PT1_D ON2097 MMBF2201PT1 MMBF2202PT3 MMBF2 |
Small-signal MOSFET TMOS single P-channel field effect transistor
Motorola Preferred Device
From old datasheet system
LOW RDS SMALL SIGNAL MOSFETS TMOS SINGLE P CHANNEL FIELD EFFECT TRANSISTORS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| PSP-500 PSP-500-5 PSP-500-15 PSP-500-24 PSP-500-48 |
TRANSDUCER,MAG,1.5Vpp @ 10mA 2048HZ @ 80db,50ohm,2 PINS
TRANS,WALL,6VDC/500mA,M2 3.5mm,UL/CSA 100/cs
TRANS,WALL,5VDC/225mA,F2, 2.5mm x 5.5mm,UL/CSA 40/cs PFC和并行与500W的功
TRANS,WALL,REG,6VDC/200MA, 2.1mmX5.5mm,F2,UL/CUL PFC和并行与500W的功
TRANS,WALL,6VDC/500mA,F1, 2.1mm X 5.5mm,UL,CULC-NEG PFC和并行与500W的功
TRANS,WALL,6VDC/500mA,F2 2.1mm x 5.5mm,UL/CSA 50/cs PFC和并行与500W的功
CONN,DSUB,.590"RT,25P-M, LONG,METAL HOUSING W/PC TABS PFC和并行与500W的功
|
Astrodyne, Inc.
|
| PTF10009 |
85 Watts, 1.0 GHz GOLDMOS?/a> Field Effect Transistor
85 Watts, 1.0 GHz GOLDMOS Field Effect Transistor
85 Watts, 1.0 GHz GOLDMOS⑩ Field Effect Transistor
85 Watts, 1.0 GHz GOLDMOSField Effect Transistor
85 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| 2SK231202 2SK231207 2SK2312 |
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (L2-PI-MOSV) CHOPPER Regulator, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−?MOSV)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−ば-MOSV)
|
Toshiba Semiconductor
|
| 2SK3079A |
Field Effect Transistor Silicon N Channel MOS Type 470 MHz Band Amplifier Applications
TRANSISTOR,MOSFET,N-CHANNEL,10V V(BR)DSS,3A I(D),RFMOD
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
Toshiba.
TOSHIBA[Toshiba Semiconductor]
|
| SSM5N05FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
