PART |
Description |
Maker |
PHD22NQ20T-01 PHD22NQ20T |
N-channel TrenchMOS standard level FET N-channel TrenchMOS standard level FET 21.1 A, 200 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 N-channel TrenchMOS?? standard level FET N-channel Trenchmos (tm) standard level FET
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NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
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PHD16N03LT |
N-channel TrenchMOS?/a> logic level FET N-channel Trenchmos (tm) logic level FET N-channel TrenchMOS⑩ logic level FET From old datasheet system N-channel TrenchMOSlogic level FET 16 A, 30 V, 0.067 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
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PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
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PHP23NQ15T PHB23NQ15T PHB_PHP23NQ15T_1 NXPSEMICOND |
N-channel TrenchMOS(tm) transistor N-channel TrenchMOS transistor From old datasheet system
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NXP Semiconductors PHILIPS[Philips Semiconductors]
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PHK5NQ10T PHK5NQ10T_1 |
N-channel TrenchMOS(tm) transistor From old datasheet system N-channel TrenchMOS transistor
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PHILIPS[Philips Semiconductors] NXP Semiconductors
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PHW80NQ10T PHW80NQ10T_1 |
N-channel TrenchMOS(tm) transistor From old datasheet system N-channel TrenchMOS transistor
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PHILIPS[Philips Semiconductors] NXP Semiconductors
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PHK4NQ10T PHK4NQ10T_1 |
N-channel TrenchMOS(tm) transistor From old datasheet system N-channel TrenchMOS transistor
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PHILIPS[Philips Semiconductors] NXP Semiconductors
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PHKD3NQ10T PHKD3NQ10T_1 |
Dual N-channel TrenchMOS(tm) transistor From old datasheet system Dual N-channel TrenchMOS transistor
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PHILIPS[Philips Semiconductors] NXP Semiconductors
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PHN210T |
Dual N-channel TrenchMOS intermediate level FET 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
|
NXP Semiconductors N.V.
|
PHX8NQ11T PHX8NQ11T127 |
N-channel TrenchMOS-TM standard level FET 7.5 A, 110 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 7.5 A, 110 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PLASTIC, TO-220F, FULL PACK-3 N-channel Trenchmos (tm) standard level FET
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NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
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2N7002T |
N-channel TrenchMOS FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.3 A; R<sub>DS(on)</sub>: 5000@10V5300@4.5V mOhm; V<sub>DS</sub>max: 60 V 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
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NXP Semiconductors N.V.
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