| PART |
Description |
Maker |
| EN8278B CPH5901F-TL-E CPH590112 CPH5901G-TL-E CPH5 |
N-Channel JFET and NPN Bipolar Transistor, 15V, 6 to 20mA, 50V, 150mA, Composite type CPH5
High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| CD1353CP |
2.4W Audio Amplifier / SIF Amplifier and Detector
2.4W AUDIO AMPLIFIER, SIF AMPLIFIER AND DETECTOR FOR TV SILICON MONOLITHIC BIPOLAR INTEGRATED CIRCUIT
|
List of Unclassifed Manufacturers
ETC[ETC]
Shaoxing
|
| ADR3410 |
50 ?High Linearity 1 Watt Amplifier
50 蟹 High Linearity 1 Watt Amplifier
50 з High Linearity 1 Watt Amplifier
The ADR3410 is a high performance, single-stage InGaP HBT amplifier designed for use in wireless infrastructure systems as a highly ...
|
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
| BA3513 BA3513AFS A5800811 |
From old datasheet system
3V dual pre / power amplifier
Audio LSIs > Headphone stereo amplifier > Prepower amplifier for headphone stereo
|
Rohm CO.,LTD.
|
| GC509 GC509-CHIP GC509-MCRO |
AUDIO AMPLIFIER, PDSO10
GC509 - Class A Amplifier with 3 Independent Gain Blocks GC509 - A类放大器3独立增益模块
AUDIO AMPLIFIER, UUC10
|
GENNUM[Gennum Corporation]
Samsung Semiconductor Co., Ltd.
|
| 2SA1015L A1015 2SA1015 |
PNP EPITAXIAL TYPE(AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER, DRIVER STAGE AMPLIFIER)
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Low Noise Amplifier Applications
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| LX5510B LX5510BLQ |
Wireless LAN Power Amplifier; Package: MLPQ16_3x3; 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
InGaP HBT 2.4 - 2.5 GHz Power Amplifier
|
Microsemi, Corp.
Microsemi Corporation
|
| AD8221BR-REEL AD8221AR-REEL AD8221ARM-REEL AD8221B |
Precision Instrumentation Amplifier
Single Supply, Rail-to-Rail, Low Cost Instrumentation Amplifier INSTRUMENTATION AMPLIFIER, 60 uV OFFSET-MAX, 0.825 MHz BAND WIDTH, PDSO8
|
http://
Analog Devices, Inc.
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| Q68000-A8882 CGY180 |
Power Amplifier (DECT, PCS)
From old datasheet system
GaAs MMIC (Power amplifier for DECT and PCS application Fully integrated 3 stage amplifier Operating voltage range: 2.7 to 6 V)
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
