| PART |
Description |
Maker |
| CY7C197B-25PC CY7C197B-12VC |
Memory : Async SRAMs
256 Kb (256K x 1) Static RAM
|
Cypress Semiconductor
|
| CY7C149-25PC CY7C149-45PC |
Memory : Async SRAMs
|
Cypress
|
| CY7C1046BV33L-15VC CY7C1046BV33 CY7C1046BV33-10 CY |
Memory : Async SRAMs
1M x 4 Static RAM 100万4静态RAM
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
http://
|
| CY7C1012AV25 CY7C1012AV25-10BGC CY7C1012AV25-10BGI |
512K x 24 static RAM, 12ns
Memory : Async SRAMs
|
Cypress Semiconductor
|
| CY7C128A-35PC CY7C128A-35VC CY7C128A-45SC CY7C128A |
2K x 8 Static RAM
Memory : Async SRAMs
|
Cypress Semiconductor
|
| GS78108A |
8Mb Async SRAMs
|
GSI Technology
|
| CY7C1018BV33-15VC CY7C1018BV33L-12VC CY7C1018BV33- |
128K x 8 static RAM, 12ns
Memory : Async SRAMs
128K x 8 static RAM, 15ns
|
CYPRESS[Cypress Semiconductor]
CYPRESS SEMICONDUCTOR CORP
|
| AM29LV102B AM29LV102BB-120EC AM29LV102BB-120ECB AM |
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory
IC SMT SRAM 128K X 8 70NS 5V SOP-32
SRAM; Memory Type:Asynchronous SRAM; Memory Size:1MB; Memory Configuration:64K x 16; Access Time, Tacc:10ns; Package/Case:44-TSOP-II; Operating Temp. Max:70 C; Operating Temp. Min:0 C RoHS Compliant: Yes
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 256K X 8 FLASH 3V PROM, 120 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 2兆位256亩8位）.0伏的CMOS只，引导扇区32引脚闪存
|
AMD[Advanced Micro Devices]
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| CY7C1443AV25 |
Memory : Sync SRAMs
|
Cypress
|
| CY62146CV30LL-55BVI CY62146CV30 CY62146CV30LL-55BA |
Memory : MicroPower SRAMs
256K x 16 Static RAM
|
Cypress Semiconductor
|
| CY62127BV CY62127BVLL-55BAI CY62127BVLL-55ZI CY621 |
64K x 16 Static RAM
Memory : MicroPower SRAMs
|
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| AM28F020 AM28F021 AM28F020-120EC AM28F020-120EE AM |
3 Megabit (256 K x 8-Bit) CMOS 12.0 Volt Bulk Erase Flash Memory(509.20 k)
Rectangular Connector; Body Material:Polyester; Series:8016; Number of Contacts:38; Contact Material:Phosphor Bronze; Contact Plating:Gold Over Nickel; Gender:Male; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
Rectangular Connector; Body Material:Polyester; Series:8016; Number of Contacts:38; Contact Material:Phosphor Bronze; Contact Plating:Gold Over Nickel; Gender:Female; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 2兆位56亩8位）的CMOS 12.0伏，整体擦除闪存
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 2兆位256亩8位）的CMOS 12.0伏，整体擦除闪存
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 200 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 150 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 120 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 200 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
