| PART |
Description |
Maker |
| PHP191NQ06LT PHB191NQ06LT |
Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology
PHP/PHB191NQ06LT; N-channel Trenchmos (tm) logic level FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BUK9515-100A BUK9615-100A |
TrenchMOS(TM) transistor Logic level FET
N-Channel Enhancement mode logic Level field-Effect power Transistor
TrenchMOS TM transistor
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| PSMN9R1-30YL |
N-channel 9.1 m30 V TrenchMOS logic level FET in LFPAK
N-channel 9.1 m? 30 V TrenchMOS logic level FET in LFPAK
N-channel 9.1 m 30 V TrenchMOS logic level FET in LFPAK
|
NXP Semiconductors N.V.
|
| BUK9728-55A NXPSEMICONDUCTORS-BUK9728-55A |
BUK9728-55A; N-channel Trenchmos (tm) logic level FET
N-channel TrenchMOS standard level FET
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| PSMN005-55B PSMN005-55P |
N-channel logic level TrenchMOS(TM) transistor
N-channel logic level TrenchMOS transistor(N沟道逻辑电平 TrenchMOS晶体
|
Philips
NXP SEMICONDUCTORS
|
| PHB55N03LT PHD55N03LT PHP55N03LT PHB55N03 |
N-channel TrenchMOS transistor Logic level FET(N沟道TrenchMOS 晶体管逻辑电平场效应管) 55 A, 25 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET
N-channel TrenchMOS transistor Logic level FET(N沟道TrenchMOS 晶体管逻辑电平场效应管) 55 A, 25 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PMV45EN |
N-channel TrenchMOS logic level FET Logic-level compatible Very fast switching
|
TY Semiconductor Co., Ltd
|
| BUK9Y19-75B |
N-channel TrenchMOS logic level FET 48.2 A, 75 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235
|
NXP Semiconductors N.V.
|
| BUK9Y53-100B BUK9Y53-100B-15 |
N-channel TrenchMOS logic level FET N沟道TrenchMOS逻辑电平场效应管
N-channel TrenchMOS logic level FET
|
NXP Semiconductors N.V.
|
| BUK9E3R7-60E |
N-channel TrenchMOS logic level FET
|
NXP Semiconductors
|
| PSMN2R0-30YL |
N-channel TrenchMOS logic level FET
|
NXP Semiconductors
|
