| PART |
Description |
Maker |
| CHA-20NF |
(CHA-20xx) Coaxial Attenuators
|
Component General
|
| 2N7002PV |
60 V, 350 mA N-channel Trench MOSFET
60 V, 350 mA dual N-channel Trench MOSFET
|
NXP Semiconductors
|
| 2N7002BK |
60 V, 350 mA N-channel Trench MOSFET
|
Nexperia
|
| NX3008NBKT-115 |
30 V, 350 mA N-channel Trench MOSFET
|
NXP Semiconductors
|
| NGB8206ANT4G NGB8206NT4G NGB8206ANSL3G NGB8206N11 |
Ignition IGBT 20 A, 350 V, N.Channel D2PAK
|
ON Semiconductor
|
| NGD8205N |
Ignition IGBT, N-Channel, 20 A, 350 V, DPAK
|
ON Semiconductor
|
| RA03M3540MD RA03M3540MD10 RA03M3540MD-101 |
RoHS Compliance , 350-400MHz 38dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO
350 MHz - 400 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
Mitsubishi Electric Semiconductor
|
| NGB8206NT4 NGB8206NT4G NGB8206NG NGB8206N |
Ignition IGBT 20 A, 350 V, N−Channel D2PAK
|
ONSEMI[ON Semiconductor]
|
| IRF721R |
3.3 A, 350 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
HARRIS SEMICONDUCTOR
|
| VN3515L |
150 mA, 350 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA
|
VISHAY SILICONIX
|
| FSL23A0R FSL23A0D FN4476 FSL23A0R4 FSL23A0D1 FSL23 |
6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
6A/ 200V/ 0.350 Ohm/ Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| TAN350 |
350 Watts, 50 Volts, Pulsed Avionics 960 1215 MHz 350瓦，50伏特，脉冲航空电601215兆赫
TACAN 960-1215 MHz, Class C, Common Base, Pulsed; P(out) (W): 350; P(in) (W): 70; Gain (dB): 7; Vcc (V): 50; Pulse Width (µsec): 10; Duty Cycle (%): 10; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
350 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz
|
Electronic Theatre Controls, Inc.
Microsemi, Corp.
ETC[ETC]
List of Unclassifed Manufacturers
|
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