| PART |
Description |
Maker |
| 2SK1365 |
FET, Silicon N Channel MOS Type(for High Speed, High Current Switching, Switching Power Supply)
|
TOSHIBA[Toshiba Semiconductor]
|
| BAW79B BAW78A-BAW79D BAW79D BAW79C BAW79A Q62702-A |
Silicon Switching Diodes (For high-speed switching High breakdown voltage Common cathode)
From old datasheet system
|
SIEMENS A G
Siemens Group
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 2SK2348 |
N-Channel Silicon MOSFET High-Voltage, High-Speed Switching Applications
High-Voltage/ High-Speed Switching Applications
|
Sanyo Semicon Device
|
| 2SC3783 |
NPN TRIPLE DIFFUSED TYPE (HIGH SPEED AND HIGH VOLTAGE SWITCHING, SWITCHING REGULATOR, HIGH SPEED DC-DC CONVERTER APPLICATIONS) npn型三重扩散型（高速，高压开关，开关稳压器，高速DC - DC转换器应用）
NPN TRIPLE DIFFUSED TYPE (HIGH SPEED AND HIGH VOLTAGE SWITCHING SWITCHING REGULATOR HIGH SPEED DC-DC CONVERTER APPLICATIONS)
NPN TRIPLE DIFFUSED TYPE (HIGH SPEED AND HIGH VOLTAGE SWITCHING/ SWITCHING REGULATOR/ HIGH SPEED DC-DC CONVERTER APPLICATIONS)
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| SMBD914 MMBD914 SMBD914/MMBD914 |
General Purpose Diodes - Silicon Switching Diode for high-speed switching
|
INFINEON[Infineon Technologies AG]
|
| BAR99 Q62702-A388 |
Silicon Switching Diode (For high-speed switching)
From old datasheet system
|
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| H7N1004LD H7N1004LS H7N1004M H7N1004LM |
Transistors>Switching/MOSFETs
Silicon N-Channel MOSFET High-Speed Power Switching
|
Renesas Electronics Corporation
|
| SMBD914 MMBD914 |
0.25 A, 100 V, SILICON, SIGNAL DIODE
Silicon Switching Diode For high-speed switching applications Qualified according AEC Q101
|
Infineon Technologies AG
|
| 2SC3376 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS.
|
TOSHIBA
|
| SMBD7000 SMBD700007 MMBD7000 |
Silicon Switching Diode Array For high-speed switching applications Qualified according AEC Q101
|
Infineon Technologies AG
|
