| PART |
Description |
Maker |
| SMJ27C010A05 SMJ27C010A-15JM AS27C010A-15ECAM AS27 |
1 MEG UVEPROM UV Erasable Programmable Read-Only Memory
128K X 8 UVPROM, 150 ns, CDIP32
Industry standard 32-pin ceramic dual-in-line package
|
AUSTIN SEMICONDUCTOR INC
Micross Components
|
| SMJ27C256-17JM |
256K UVEPROM; UV erasable programmable read-only memory
|
Austin Semiconductor
|
| MT48LC16M16A2P-75DTR |
SDR SDRAM MT48LC64M4A2 ?16 Meg x 4 x 4 banks MT48LC32M8A2 ?8 Meg x 8 x 4 banks MT48LC16M16A2 ?4 Meg x 16 x 4 banks
|
Micron Technology
|
| MT47H32M16HR-25E MT47H64M8CF-25EG |
DDR2 SDRAM MT47H128M4 ?32 Meg x 4 x 4 banks MT47H64M8 ?16 Meg x 8 x 4 banks MT47H32M16 ?8 Meg x 16 x 4 banks
|
Micron Technology
|
| MT41J64M16JT MT41J128M8 MT41J256M4 MT41J64M16JT-12 |
DDR3 SDRAM MT41J256M4 ?32 Meg x 4 x 8 banks MT41J128M8 ?16 Meg x 8 x 8 banks MT41J64M16 ?8 Meg x 16 x 8 banks
|
Micron Technology
|
| EP1810LC-45 EP1810LC-20 EP1810LI-25 EP1810LI-45 EP |
UV-Erasable/OTP Complex PLD UV-Erasable/OTP复杂可编程逻辑器件
Dual LDO with Low Noise, Low IQ, and High PSRR; Temperature Range: -40°C to 85°C; Package: 10-DFN T&R
UV-Erasable/OTPComplexPLD
|
Vicor, Corp.
|
| MT46H16M16LFBF-6ITH MT46H8M32LGB5-75ITA |
Mobile DDR SDRAM MT46H16M16LF ?4 Meg x 16 x 4 banks MT46H8M32LF/LG ?2 Meg x 32 x 4 banks
8M X 32 DDR DRAM, 6 ns, PBGA90
|
Micron Technology
|
| SMJ27C010A SMJ27C010A-12 SMJ27C010A-15 SMJ27C010A- |
UVEPROM
|
Electronic Theatre Controls, Inc.
|
| PALC16R4Q-25CN PALC16R4Q-25CQ PALC16R4Q-25CNL PAL1 |
UV-Erasable/OTP PLD UV-Erasable/OTP可编程逻辑器件
ASIC 专用集成电路
|
Cypress Semiconductor, Corp.
霍尼韦尔
KEMET Corporation
|
| LC866524 LC866528 LC866532 LC866540 LC86E6548 LC86 |
8-Bit Single Chip Microcontroller with the UVEPROM
|
SANYO[Sanyo Semicon Device]
|
| ATV5100-30KM/883 ATV5100L-35UM/883 ATV5100-35UM/88 |
UV-Erasable/OTP Complex PLD UV-Erasable/OTP复杂可编程逻辑器件
|
Actel, Corp.
Atmel, Corp.
|
| CY7C341B-30JI CY7C341B-30RC CY7C341B-30JC CY7C341B |
UV-Erasable/OTP Complex PLD UV-Erasable/OTP复杂可编程逻辑器件
|
Fujitsu, Ltd.
|
