PART |
Description |
Maker |
M25PE80 M25PE80-VMN6G M25PE80-VMN6P M25PE80-VMN6TG |
8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout
|
Numonyx B.V
|
M45PE10 M45PE10-VMP6 M45PE10-VMP6TG M45PE10-VMP6TP |
4 Mbit Uniform Sector, Serial Flash Memory 4兆位统一部门,串行闪 1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface
|
STMicroelectronics N.V. 意法半导
|
M45PE40 M45PE40-VMP6G M45PE40-VMP6TG M45PE40-VMP6T |
4 Mbit Uniform Sector, Serial Flash Memory From old datasheet system 4 MBIT, LOW VOLTAGE, PAGE-ERASABLE SERIAL FLASH MEMORY WITH BYTE-ALTERABILITY AND A 33 MHZ SPI BUS INTERFACE
|
意法半导 STMICROELECTRONICS[STMicroelectronics]
|
M45PE16-VMW6G M45PE16-VMW6P M45PE16-VMW6TG M45PE16 |
16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface
|
Numonyx B.V
|
M45PE80 M45PE80-VMN6G M45PE80-VMN6P M45PE80-VMN6TG |
8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface
|
Numonyx B.V
|
M45PE80 M45PE80-VMN6G M45PE80-VMN6P M45PE80-VMN6TG |
8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface
|
http://
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M45PE10-07 M45PE10-VMP6TP M45PE10 M45PE10-VMN6G M4 |
1 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface
|
STMICROELECTRONICS[STMicroelectronics]
|
M25PE40-VMP6G M25PE40-VMP6TG |
4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory with Byte-Alterability, 25 MHz SPI Bus, Standard Pinout
|
ST Microelectronics
|
M29DW127G M29DW127G70NF6E |
128-Mbit (8 Mbit x16 or 16 Mbit x8 , multiple bank, page, dual boot) 3 V supply flash memory
|
Numonyx B.V
|
M29W064FB90N3E M29W064FB90N3F M29W064FT |
64 Mbit (8 Mbit x 8 or 4 Mbit x 16, page, boot block) 3 V supply Flash memory
|
Numonyx B.V
|
NAND01GW4A2CZB1 NAND01GW4A2AZB1T NAND512R3A0AN1E N |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆,256兆,512兆位千兆位(x8/x1628 Byte/264字的页面.8V/3V,NAND闪存芯片
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意法半导 STMicroelectronics N.V.
|
IS41C16105 IS41C16105-50K IS41C16105-50KE IS41C161 |
1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE 1M X 16 FAST PAGE DRAM, 50 ns, PDSO42 1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE 1M X 16 FAST PAGE DRAM, 50 ns, PDSO44
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Integrated Silicon Solution Inc ISSI[Integrated Silicon Solution, Inc] Integrated Circuit Solution Inc Integrated Silicon Solution Inc Integrated Silicon Solution, Inc.
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