| PART |
Description |
Maker |
| BLA1011-10 |
Avionics LDMOS transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| 0912LD20 |
20 Watts, 28 Volts Pulsed Avionics 960 to 1215 MHz LDMOS FET
|
Microsemi Corporation
|
| 1015MP |
RF Power Transistors: AVIONICS
15 Watts, 50 Volts Avionics 1025 - 1150 MHz
|
ADPOW[Advanced Power Technology]
|
| JTDB25 |
RF Power Transistors: AVIONICS
25 Watts, 36 Volts, Pulsed Avionics 960 - 1215 MHz 25瓦，36伏特，脉冲航空电子设960 - 1215兆赫
High power COMMON BASE bipolar transistor.
|
Advanced Power Technology
Electronic Theatre Controls, Inc.
GHz Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| 0912-25 |
TRANSISTOR | BJT | NPN | 2.5A I(C) | FO-67VAR
25 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz
RF Power Transistors: AVIONICS
|
GHZTECH[GHz Technology]
Advanced Power Technology
|
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| PH1090-175L PH1090-175 PH1090 |
Avionics Pulsed Power Transistor175 Watts锛?1030-1090MHz
Avionics Pulsed Power Transistor - 175 Watts, 1030-1090 MHz, 250ms Pulse,
Avionics Pulsed Power Transistor - 175 Watts 1030-1090 MHz 250ms Pulse
Avionics Pulsed Power Transistor175 Watts1030-1090MHz
|
MACOM[Tyco Electronics]
|
| BLF6G13L-250P BLF6G13LS-250P |
Product description250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz.
Power LDMOS transistor BLF6G13LS-250P<SOT1121B (CDFM4)|<<http://www.nxp.com/packages/SOT1121B.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| BLF6G22-45 |
Power LDMOS transistor
Product description45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
|
NXP Semiconductors N.V.
|
| MHPA18010 |
MHPA18010 1805-1880 MHz, 10 W, 24.5 dB RF High Power LDMOS Amplifier
CDMA BAND RF LINEAR LDMOS AMPLIFIER
|
MOTOROLA[Motorola, Inc]
|
| MHVIC2115R2 |
MHVIC2115R2 2.2 GHz, 26 V, 23/34 dBm W-CDMA RF LDMOS Integrated Circuit
RF LDMOS Wideband Integrated Power Amplifier
|
MOTOROLA[Motorola, Inc]
|
| BLF3G21-30 |
30 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.
UHF power LDMOS transistor BLF3G21-30<SOT467C (SOT467C)|<<http://www.nxp.com/packages/SOT467C.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
