PART |
Description |
Maker |
IRHLUB7930Z4 IRHLUB7970Z410 JANSR2N7626UB |
RADIATION HARDENED RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (UB)
|
International Rectifier
|
2N7632UC IRHLUC7630Z4 IRHLUC7670Z4 IRHLUC7670Z4-15 |
RADIATION HARDENED60V, Combination 1N-1P-CHANNELLOGIC LEVEL POWER MOSFET RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT Simple Drive Requirements
|
International Rectifier
|
IRHLG770Z4 IRHLG730Z4 |
RADIATION HARDENED LOGIC LEVEL POWER MOSFET
|
IRF[International Rectifier]
|
IRHLG7670Z4 |
RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (MO-036AB)
|
International Rectifier
|
IRHLNA77064 IRHLNA73064 |
RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2)
|
IRF[International Rectifier]
|
IRHLUC7970Z4 IRHLUC7970Z4-15 |
RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT Simple Drive Requirements
|
International Rectifier
|
2N7609U8 IRHLNM73110 IRHLNM77110 |
RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT
|
International Rectifier
|
HCS154HMSR FN3077 HCS151MS HCS151D HCS151DMSR HCS1 |
Multiplexer, Digital, 8-Input, Rad-Hard, High-Speed, CMOS, Logic Radiation Hardened 4-to-16 Line Decoder/Demultiplexer From old datasheet system Radiation Hardened 8-Input Multiplexer
|
INTERSIL[Intersil Corporation]
|
HCS109HMSR HCS109KMSR FN2466 HCS109MS HCS109D HCS1 |
Radiation Hardened Dual JK Flip Flop HC/UH SERIES, DUAL POSITIVE EDGE TRIGGERED J-KBAR FLIP-FLOP, COMPLEMENTARY OUTPUT, CDIP16 Radiation Hardened Dual JK Flip Flop(抗辐射双J-K触发 辐射加固JK触发器拖鞋(抗辐射双JK触发器) From old datasheet system Flip Flop, JK, Dual, Rad-Hard, High-Speed, CMOS, Logic
|
Intersil, Corp. INTERSIL[Intersil Corporation]
|
5962R9574401VXC 5962R9664901VEC 5962R9578601VXC |
Radiation Hardened 8-Bit Bidirectional CMOS/TTL Level Converter
|
Intersil
|
FSPYC260D1 FSPYC260F FSPYC260F4 FN4850 FSPYC260R4 |
From old datasheet system Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射,抗SEGR N沟道功率MOSFET(抗辐射沟道马鞍山场效应管) Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 58 A, 200 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation] Intersil, Corp.
|