| PART |
Description |
Maker |
| PBRP123ET |
PNP 800 mA, 40 V BISS RET; R1 = 2.2 kOhm, R2 = 2.2 kOhm
PNP 800 mA, 40 V BISS RET; R1 = 2.2 kW, R2 = 2.2 kW
|
NXP Semiconductors
|
| PBSS5160U PBSS5160U115 |
60 V, 1 A PNP low VCEsat (BISS) transistor; Package: SOT323 (SC-70); Container: Tape reel smd 800 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| PBSS302PZ |
20 V, 5.5 A PNP low VCEsat (BISS) transistor 20伏，5.5安PNP型低饱和压降（BISS）晶体管
|
NXP Semiconductors N.V.
|
| PBSS4021PT |
20 V, 3.5 A PNP low VCEsat (BISS) transistor
20 V, 3.5 A PNP low V_CEsat (BISS) transistor 3500 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
|
NXP Semiconductors N.V.
|
| PUMB2 PEMB2-PUMB2-15 |
PNP/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages.
PNP/PNP resistor-equipped transistors R1 = 47 k? R2 = 47 k?
|
NXP Semiconductors
|
| 2SA1078 |
SILICON PNP RING EMITTER TRANSISTOR (RET)
|
Fujitsu Microelectronics
FUJITSU[Fujitsu Media Devices Limited]
|
| PBRN113E PBRN113EK PBRN113ES PBRN113ET |
NPN 800 mA, 40 V BISS RETs; R1 = 1 kOhm, R2 = 1 kOhm
NPN 800 mA, 40 V BISS RETs; R1 = 1 k? R2 = 1 k?
NPN 800 mA, 40 V BISS RETs; R1 = 1 k搂?, R2 = 1 k搂?
|
NXP Semiconductors
|
| PBRN113E |
NPN 800 mA 40 V BISS RETs
|
NXP Semiconductors
|
| PBSS304PX |
60 V, 4.2 A PNP low V_CEsat (BISS) transistor
60 V, 4.2 A PNP low VCEsat (BISS) transistor
|
NXP Semiconductors N.V.
|
| PBSS4032SP |
4.8A PNP/PNP Low V_CEsat (BISS) Transistor
|
Philips Semiconductors
|
| PBLS6001D |
60 V PNP BISS loadswitch
|
NXP Semiconductors
|
| PBLS4001D |
40 V PNP BISS loadswitch
|
NXP Semiconductors
|
