| PART |
Description |
Maker |
| RFP-100200N4X50-2 |
Aluminum Nitride Terminations
|
Anaren Microwave
|
| RFP-10N50TV |
Aluminum Nitride Terminations
|
Anaren Microwave
|
| RFP-100N50TW |
Aluminum Nitride Terminations
|
Anaren Microwave
|
| RFP-375375N6X50-2 |
Aluminum Nitride Terminations
|
Anaren Microwave
|
| RFP-100200N4Z50-2 |
Aluminum Nitride Terminations 10 Watts, 50ohm
|
Anaren Microwave
|
| PO6-TMP-025-1 PO6-TMLP-025 FL-TMP-025-1 TNC-TMP-1 |
Non-reflective Terminations (N, TNC, SSMA, POB, FL, and PO6) 非（不适用，跨国公司，多址，平衡原则，佛罗里达州，并PO6反射终止
Non-reflective Terminations (N / TNC / SSMA / POB / FL / and PO6)
Non-reflective Terminations (N TNC SSMA POB FL and PO6)
Non-reflective Terminations (N/ TNC/ SSMA/ POB/ FL/ and PO6)
|
HIROSE ELECTRIC Co., Ltd.
Hirose Electric USA, INC.
HIROSE[Hirose Electric]
|
| NPT2020 |
Gallium Nitride 48V, 50W, DC-3.5 GHz HEMT
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solution...
|
| NPT25100 |
Gallium Nitride 28V, 125W RF Power Transistor
|
M/A-COM Technology Solutions, Inc.
|
| DS1808 |
Process: 1P, 1M, 5.0um, 30V NF & PF, UVNd, UVPd ,N ESD,TEOS Spacer, Passivation w/Nov TEOS Oxide-Nitride 双路对数数字电位
Process: 1P, 1M, 5.0um, 30V NF & PF, UVNd, UVPd ,N ESD,TEOS Spacer, Passivation w/Nov TEOS Oxide-Nitride
|
Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
|
| TCD-3020B50G-G TCD-3020B50G-G-TR TCD-3020B50J-G TC |
Chip Terminations
|
American Accurate Components, Inc.
|
| RFP-10-50TV |
Flanged Terminations
|
Anaren Microwave
|
| RFP-100-50TW |
Flanged Terminations
|
Anaren Microwave
|
