| PART |
Description |
Maker |
| CS-514-4DW24 CS-514-2DW18 CS-514-6DW28 CS-514-6FN2 |
4-Channel Disk/Tape Read/Write Circuit
6通道写电
4通道的磁磁带写电
2-Channel Disk Read/Write Circuit 2通道磁盘写电
6-Channel Read/Write Circuit
|
Glenair, Inc.
|
| SSI32R511-8F SSI32R516-6CH SSI32R516-6CL SSI32R516 |
4-Channel Disk/Tape Read/Write Circuit
8-Channel Disk Read/Write Circuit 8通道磁盘写电
6-Channel Read/Write Circuit 6通道写电
|
API Delevan
|
| BH6626FS |
Magnetic Disk LSIs > FDD read/write amplifier
Read /Write amplifier for FDD
|
ROHM[Rohm]
|
| SSI32R510AR-6CP SSI32R510AR-6CH SSI32R510AR-6CL SS |
6-Channel Read/Write Circuit
4-Channel Disk/Tape Read/Write Circuit 4通道的磁磁带写电
|
Electronic Theatre Controls, Inc.
|
| BH6629BFS |
Magnetic Disk LSIs > FDD read/write amplifier
Read /Write amplifier for FDD
|
ROHM[Rohm]
|
| VM720HN6SSJ VM720L2POJ |
6-Channel Read/Write Circuit
2-Channel Disk Read/Write Circuit 2通道磁盘写电
|
Advanced Semiconductor, Inc.
|
| EM4095 EM4095HMSO16A |
Read / Write Analog Front End
Read/Write analog front end for 125kHz RFID Basestation
|
EM Microelectronic - MARIN SA
ETC
|
| SSI32R2320W-4CV SSI32R2320W-4CL SSI32R2320W-4CVT S |
2-Channel Disk Read/Write Circuit
4-Channel Disk/Tape Read/Write Circuit 4通道的磁磁带写电
|
Optoway Technology, Inc.
|
| CXA3090N |
6ch. Read/Write Amplifier for Thin Film Head of
6ch. Read/Write Amplifier for Thin Film Head of Hard Disk Drive
|
SONY[Sony Corporation]
|
| AT49BV002A AT49BV002AN AT49V002ANT AT49V002AT AT49 |
AT49BV002A(N)(T) [Updated 8/03. 19 Pages] 256K x 8 (2M bit). 2.7-Volt Read and 2.7-Vold Write. Top or Bottom Boot Parametric Block Flash
256K x 8 (2M bit), 2.7-Volt Read and 2.7-Volt Write, Top Boot Parametric Block Flash
256K x 8 (2M bit), 2.7-Volt Read and 2.7-Volt Write, Bottom Boot Parametric Block Flash
|
Atmel
|
| S29PL127N65GAWW02 S29PL127N65GAW003 S29PL127N65GAI |
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 8M X 16 FLASH 3V PROM, 65 ns, PBGA64
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 256/128/128字节6/8/8 M中的x 16位）.0伏的CMOS只同步读/写，页模式闪
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 8M X 16 FLASH 3V PROM, 70 ns, PBGA64
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 16M X 16 FLASH 3V PROM, 70 ns, PBGA84
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 16M X 16 FLASH 3V PROM, 65 ns, PBGA84
|
Spansion, Inc.
Spansion Inc.
SPANSION LLC
|
