| PART |
Description |
Maker |
| BLF6G22S-45112 |
Product description45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Power LDMOS transistor BLF6G22S-45<SOT608B (CDFM2)|<<http://www.nxp.com/packages/SOT608B.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| BLF6G27LS-135 BLF6G27-135 |
Product description135 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
WiMAX power LDMOS transistor BLF6G27LS-135<SOT502B (SOT502B)|<<http://www.nxp.com/packages/SOT502B.html<1<Always Pb-free,;BLF6G27LS-135<SOT502B (SOT502B)|<<http://www.nxp.com/packages/SOT502B.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| 0809LD30P |
Compant High-Insulation Power Relay, Polarized, 10A
30 Watt / 28V / 1 Ghz LDMOS FET
30 WATT 28V 1 GHz LDMOS FET
30 WATT, 28V, 1 GHz LDMOS FET
|
Electronic Theatre Controls, Inc.
GHZ Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| BLF7G22LS-100P |
Power LDMOS transistor
100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
|
NXP Semiconductors N.V.
|
| V850E1 V850E_SV2 V850E_IA1 V850E_IA2 V850E_IA3 V85 |
V850E/IA2 Flash product ROM: 128 KB, RAM: 6 KB
V850E/IA2 Mask product ROM: 128 KB, RAM: 6 KB
V850E/IA3 Flash product ROM: 256 KB, RAM: 12 KB
ROM-less version; Internal RAM: 4K bytes
32-bit RISC single-chip microcontroller V850E/SV2
V850E/IA4 Flash memory product ROM: 256 KB, RAM: 12 KB
32-Bit Microprocessor Core
|
NEC[NEC]
|
| BLS7G2325L-105 BLS7G2325L-105-15 |
Power LDMOS transistor BLS7G2325L-105<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
| AD806706 AD8067ARTZ-R2 AD8067ARTZ-REEL AD8067 |
High Gain Bandwidth Product, Precision Fast FET?Op Amp
High Gain Bandwidth Product, Precision Fast FET⑩ Op Amp
High Gain Bandwidth Product, Precision Fast FET?/a> Op Amp
High Gain Bandwidth Product, Precision FastFET™ Op Amp; Package: SOT-23; No of Pins: 5; Temperature Range: Industrial OP-AMP, 1000 uV OFFSET-MAX, PDSO5
|
Analog Devices, Inc.
|
| MHVIC915R2_D MHVIC915 MHVIC915R2 MHVIC915R2/D |
MHVIC915R2 CDMA, GSM/GSM EDGE, 946-960 MHz, 15 W, 27 V RF LDMOS Wideband Integrated Amplifier
746-960 MHz RF LDMOS Wideband Integrated Power Amplifier
|
MOTOROLA[Motorola, Inc]
Motorola, Inc.
|
| 7703403UA 7703401YA 77034042A 7703404MA 7703404NA |
Negative Adjustable Voltage Regulator
15 HZ, 90DB REJECTION BTW 49 & 61 HZ (PRODUCT DIE), -40C to 125C, 8-SOIC 150mil, TUBE
15 HZ, 90DB REJECTION BTW 49 & 61 HZ (PRODUCT DIE), -40C to 125C, 8-MSOP, T/R
15 HZ, 90DB REJECTION BTW 59 & 61 HZ (PRODUCT DIE), -40C to 125C, 8-SOIC 150mil, T/R
60 HZ, 120DB REJECTION AT 240 HZ (PRODUCT DIE), -40C to 125C, 8-MSOP, TUBE
60 HZ, 120DB REJECTION AT 240 HZ (PRODUCT DIE), -40C to 125C, 8-SOIC 150mil, TUBE
60 HZ, 120DB REJECTION AT 240 HZ (PRODUCT DIE), -40C to 125C, 8-MSOP, T/R
Low-cost volatile, Digital Potentiometer, -40C to 125C, 8-SOIC 150mil, TUBE
PRODUCT TO FREQUENCY CONVERTER WHICH IS USED TO POWER METERING APLICATIONS, -40C to 85C, 24-SSOP 208mil, TUBE 积极可调电压稳压
18 BIT DEL-SIG A/D CONVERTER, -40C to 125C, 6-SOT-23, T/R 积极可调电压稳压
Positive Adjustable Voltage Regulator 积极可调电压稳压
ENERGY METER IC, GAIN 1:16, 500:1 DYNAMIC RANGE, -40C to 85C, 24-SSOP 208mil, T/R 积极可调电压稳压
|
International Rectifier, Corp.
TE Connectivity, Ltd.
Kingbright, Corp.
NIC Components, Corp.
|
| ES1938 ES1938S |
PCI AudioDrive Solution Product Brief
ConsumerIC
PCI Audio Drive Solution Product Brief
|
ESS Technology
Electronic Theatre Controls, Inc.
|
| 100B4R7CP500X 100B100JCA500X MW4IC001NR4 CRCW12062 |
RF LDMOS Wideband Integrated Power Amplifiers
RF LDMOS Wideband Integrated Power Amplifiers 射频LDMOS宽带集成功率放大
|
飞思卡尔半导体(中国)有限公司
|
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