| PART |
Description |
Maker |
| DTB543EM DTB543EE |
-500mA / -12V Low VCE (sat) Digital transistors (with built-in resistors)
|
ROHM[Rohm]
|
| DTD543ZE DTD543ZM |
500mA / 12V Low VCE (sat) Digital transistors (with built-in resistors)
|
Rohm
|
| 2SA1900 |
Low saturation voltage, typically VCE(sat) = 0.15V at IC /IB = 500mA / 50mA
|
TY Semiconductor Co., Ltd
|
| 2SA1735 |
Low Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -500mA) Small Flat Package
|
TY Semiconductor Co., Ltd
|
| CPH3106 |
Bipolar Transistor -12V, -3A, Low VCE(sat), PNP Single CPH3
|
ON Semiconductor
|
| 2SB118410 2SB1184TLR 2SB1243TV2Q |
Power Transistor (-60V, -3A)
Low VCE(sat).VCE(sat) = -0.5V (Typ.)(IC/IB = -2A / -0.2A), Complements the 2SD1760 / 2SD1864.
|
Rohm
|
| 2SD1760 |
Low VCE(sat), VCE(sat) = 0.5V (typical) Collector-base voltage VCBO 60 V
|
TY Semiconductor Co., Ltd
|
| NSS30100LT1G |
30V, 2A, Low VCE(sat) PNP Transistor(30V,2A,低VCE(sat)，PNP型晶体管) 1000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
30 V, 2 A, Low Vce(sat) PNP Transistor
|
ONSEMI[ON Semiconductor]
|
| NSS20500UW3T2G |
20 V, 7.0 A, Low VCE(sat) PNP Transistor(20V, 7.0A, 低VCE(sat) PNP晶体
|
ONSEMI[ON Semiconductor]
|
| IXGT31N60D1 IXGH31N60D1 |
Ultra-Low VCE(sat) IGBT with Diode(VCES00V，VCE(sat).7V的绝缘栅双极晶体带二极管)) 60 A, 600 V, N-CHANNEL IGBT, TO-247AD
Ultra-Low V IGBT with Diode
|
IXYS, Corp.
IXYS Corporation
|
| NSS20300MR6T1G |
20V, 5A, Low VCE(sat) PNP Transistor(20V,5A,低VCE(sat)，PNP型晶体管)
|
ON Semiconductor
|
