PART |
Description |
Maker |
MRFG35003MT1 MRFG35003NT1 |
RF REFERENCE DESIGN LIBRARY GALLIUM ARSENIDE PHEMT
|
Freescale Semiconductor, Inc
|
MRFG35005NT1 MRFG35005MT1 |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
Freescale (Motorola) Freescale Semiconductor, Inc 飞思卡尔半导体(中国)有限公司
|
MRFG35003N6AT1 |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
MRFG35030R5 |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
DGSK40-025A |
Gallium Arsenide Schottky Rectifier 18 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-220AB
|
IXYS, Corp.
|
DGS9-03AS DGS10-03A |
Gallium Arsenide Schottky Rectifier 11 A, 300 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-220AC
|
IXYS, Corp. IXYS[IXYS Corporation]
|
DGS10-022AS |
Gallium Arsenide Schottky Rectifier 9 A, 220 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-263AB
|
IXYS, Corp.
|
DSEP30-06A DGS19-025AS DGSK40-025A DGSK40-025AS DG |
Gallium Arsenide Schottky Rectifier 18 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-263AB HiPerFRED Epitaxial Diode with soft recovery
|
IXYS, Corp. IXYS[IXYS Corporation]
|
WP7113ID5V13 |
The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.
|
Kingbright Corporation
|
GN01021 |
Gallium Arsenide Devices
|
Panasonic
|
GN01068B |
Gallium Arsenide Devices
|
Panasonic
|