| PART |
Description |
Maker |
| NTJD5121NT1G NTJD5121N |
Power MOSFET 60 V, 295 mA, Dual N-Channel with ESD Protection, SC-88
|
ON Semiconductor
|
| ISL3332 ISL3332IAZ ISL3333IRZ |
3.3V, ±15kV ESD Protected, Two Port, Dual Protocol (RS-232/RS-485) Transceivers; Temperature Range: -40°C to 85°C; Package: 28-SSOP DUAL LINE TRANSCEIVER, PDSO28
3.3V, ±15kV ESD Protected, Two Port, Dua Protocol RS-232/RS-485 Transceivers
3.3V, 隆戮15kV ESD Protected, Two Port, Dua Protocol RS-232/RS-485 Transceivers
|
Intersil, Corp.
Intersil Corporation
|
| 45660-0001 0456600001 |
7.50mm (.295) Power Dock Plug 250V, Gold Zone Both Sides of Blade, 1 Circuit, 0.75μm (30μ) Select Gold (Au)
|
Molex Electronics Ltd.
|
| 0740268114 74026-8114 |
2.00mm (.079") Pitch VHDM庐 Board-to-Board Daughtercard Receptacle, Right Angle8-Row, 3 Blade Power Module, 3 Circuits, Mating Blade Length: 7.50mm (.295") Blade
2.00mm (.079) Pitch VHDM? Board-to-Board Daughtercard Receptacle, Right Angle8-Row, 3 Blade Power Module, 3 Circuits, Mating Blade Length: 7.50mm (.295) Blade
|
Molex Electronics Ltd.
|
| IRF1404SPBF IRF1404LPBF IRF1404STRLPBF IRF1404SPBF |
HEXFET垄莽 Power MOSFET
HEXFET? Power MOSFET
75 A, 40 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
Advanced Process Technology
|
International Rectifier
|
| IRFL4310 IRFL4310TR |
HEXFET? Power MOSFET
1.6 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=1.6A)
100V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
|
IRF[International Rectifier]
|
| AM29LV010B-45RJC AM29LV010B-55JC AM29LV010B-55JE A |
A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET ST Package
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package
80V Single N-Channel HEXFET Power MOSFET in a SO-8 package
-40V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
20V Dual N-Bidirectional HEXFET Power MOSFET in a 6-Lead FlipFET
30V N-Channel PowerTrench MOSFET 30VN沟道的PowerTrench MOSFET
-12V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 package x8闪存EEPROM
1 Mb (128K x 8) Uniform Sector, Flash Memory 128K X 8 FLASH 3V PROM, 70 ns, PQCC32
x8 Flash EEPROM x8闪存EEPROM
|
Toshiba, Corp.
Advanced Micro Devices, Inc.
Spansion, Inc.
|
| SI4410DYPBF SI4410DYTRPBF |
N-Channel MOSFET
10 A, 30 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA LEAD FREE, SO-8
HEXFET㈢Power MOSFET
HEXFET?Power MOSFET
|
Hypertronics, Corp.
International Rectifier
|
| SFW12955 SFW2955 |
Advenced Power MOSFET 9.4 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
Advanced Power MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IXTH36N50P IXTT36N50P IXTV36N50P IXTV36N50PS IXTQ3 |
MOSFET N-CH 500V 36A TO-247 36 A, 500 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
PolarHV Power MOSFET
|
IXYS, Corp.
IXYS Corporation
|
|
