| PART |
Description |
Maker |
| N01L0818L1A |
1Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 128Kx8 bit
|
NanoAmp Solutions
|
| N01L63W3AB25I N01L63W3AB25IT N01L63W3A |
1 Mb Ultra-Low Power Asynchronous CMOS SRAM
1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K ? 16 bit
|
ON Semiconductor
|
| A0A16 |
Low Power Slow SRAM - 1Mb
|
Hynix Semiconductor
|
| IC62VV1008LL IC62VV1008L IC62VV1008L-100B IC62VV10 |
70ns; 1.8V; 1M x 8 ultra low power CMOS static RAM
1 M x 8 bit Low Voltage and Ultra Low Power CMOS Static RAM
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM
100ns; 1.8V; 1M x 8 ultra low power CMOS static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| HY62V8100B HY62V8100BLLT1 HY62V8100BLLG-E HY62V810 |
Low Power Slow SRAM - 1Mb
128K x8 bit 3.3V Low Power CMOS slow SRAM
|
HYNIX[Hynix Semiconductor]
|
| M29W800DB M29W800DT M29W800DB70M1T M29W800DB70M6T |
8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory
Low-Power Configurable Multiple-Function Gate 6-SOT-23 -40 to 85 8兆（1兆x812KB的x16插槽，引导块V电源快闪记忆
Low-Power Configurable Multiple-Function Gate 6-DSBGA -40 to 85 8兆（1兆x812KB的x16插槽，引导块V电源快闪记忆
8 Mbit (1Mb x8 or 512Kb x16 / Boot Block) 3V Supply Flash Memory
|
STMicroelectronics N.V.
ST Microelectronics
|
| M27V801-200P6TR M27V801 M27V801-120F1TR M27V801-12 |
NND - 8 MBIT (1MB X8) LOW VOLTAGE UV EPROM AND OTP EPROM
Hex Inverting Drivers 14-PDIP 0 to 70
Hex Inverting Drivers 14-SO 0 to 70
8 Mbit 1Mb x8 Low Voltage UV EPROM and OTP EPROM 8兆x8低压紫外线EPROM和检察官办公室存储器
Quadruple 2-Input Positive-AND Buffers/Drivers 14-SOIC 0 to 70 8兆x8低压紫外线EPROM和检察官办公室存储器
Hex Inverting Drivers 14-SOIC 0 to 70 8兆x8低压紫外线EPROM和检察官办公室存储器
8 Mbit 1Mb x8 Low Voltage UV EPROM and OTP EPROM 81兆x8低压紫外线EPROM和检察官办公室存储器
|
SGS Thomson Microelectronics
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| IRFR3910PBF IRFR3910TR IRFR3910TRPBF IRFR3910PBF-1 |
16 A, 100 V, 0.115 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
Ultra Low On-Resistance
ULTRA LOW ON RESISTANCE
Ultra Low On-Resistance
|
International Rectifier
|
| GLT6100L08LL-55TC GLT6100L08LL-70TC GLT6100L08LL-8 |
55ns; Ultra low power 64K x 16 CMOS SRAM
70ns; Ultra low power 64K x 16 CMOS SRAM
85ns; Ultra low power 64K x 16 CMOS SRAM
100ns; Ultra low power 64K x 16 CMOS SRAM
|
G-LINK Technology
|
| GLT6100L08LL-100ST GLT6100L08LL-100TS GLT6100L08LL |
100ns; Ultra low power 128k x 8 CMOS SRAM
55ns; Ultra low power 128k x 8 CMOS SRAM
70ns; Ultra low power 128k x 8 CMOS SRAM
85ns; Ultra low power 128k x 8 CMOS SRAM
|
G-LINK Technology
|
| 100QE 58PHL 51PBH 51PBHL 11OPS3M 31OPS3M 11OBH3M 3 |
Optoelectronic
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits
Ultra-Low-Power Voltage Detectors and µP Supervisory Circuits
4A High Efficiency Switching Regulators
Afterburner Chip
8-Digit, Triplexed LCD Decoder Driver
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits 光电
High-Efficiency, Wide Brightness Range, CCFL Backlight Controllers 光电
Low-Power, 8-Channel, Serial 12-Bit ADCs 光电
|
ADC
Square D by Schneider Electric
|
