| PART |
Description |
Maker |
| RCR150BX12 RCR150BX16 RCR150BX20 RCR150BX24 FR500A |
THYRISTOR|REVERSE-CONDUCTING|600V V(DRM)|STF-M20
THYRISTOR|REVERSE-CONDUCTING|800V V(DRM)|STF-M20
THYRISTOR|REVERSE-CONDUCTING|1KV V(DRM)|STF-M20
THYRISTOR|REVERSE-CONDUCTING|1.2KV V(DRM)|STF-M20
THYRISTOR|REVERSE-CONDUCTING|600V V(DRM)|TO-200VAR84 晶闸管|反向导电| 600V的五（DRM）的|00VAR84
THYRISTOR|REVERSE-CONDUCTING|600V V(DRM)|TO-200VAR50
THYRISTOR|REVERSE-CONDUCTING|600V V(DRM)|TO-200AB
THYRISTOR|REVERSE-CONDUCTING|800V V(DRM)|TO-200VAR50
|
Rochester Electronics, LLC
|
| H15R1203 |
Reverse conducting IGBT
|
Infineon Technologies
|
| IHW40N120R3 |
Reverse conducting IGBT
|
Infineon
|
| IHW15N120R |
Reverse Conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
| IHY20N135R3 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies A...
|
| IHW40N65R5-15 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies A...
|
| IHW25N120R2 |
Reverse Conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
| IHW30N120R2 |
Reverse Conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
| IHW30N100R |
Reverse Conducting IGBT with monolithic body diode
|
INFINEON[Infineon Technologies AG]
|
| IGB30N60T IGB30N60T09 |
Low Loss IGBT in TrenchStop technology
|
Infineon Technologies AG
|
| IGP10N60T07 |
Low Loss IGBT in TrenchStop and Fieldstop technology
|
Infineon Technologies AG
|
