| PART |
Description |
Maker |
| MAAM-007219-000000 |
3.6 V, 450 mW DECT RF Power Amplifier IC 1880 - 1900 MHz 3.6 V的，450毫瓦的DECT射频功率放大器IC 1880900年兆
|
NXP Semiconductors N.V.
|
| ITT2205AF |
3.6V 0.5W RF Power Amplifier IC for DECT
|
M/A-COM / Tyco Electronics
|
| CGY2032TSC1 |
DECT 500 mW power amplifier
|
Philips
|
| SKY77198-12 |
Power Amplifier Module for TD-SCDMA (1880-1920 MHz, 2010-2025 MHz)
|
Skyworks Solutions Inc.
|
| T2801 T2801-PLH T2801NBSP |
From old datasheet system
Transceiver for DECT application
DECT Single-Chip Transceiver
|
ATMEL[ATMEL Corporation]
|
| T2802NBSP T2802 |
2.5 GHz DECT transceiver IC with integrated VCO
2.4-GHz DECT Non-Blind-Slot RF Transceiver
|
Atmel Corp
|
| PTF181301 PTF181301A |
LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz LDMOS射频功率场效应晶体管130瓦，1805年至1880年兆
LDMOS RF Power Field Effect Transistor 130 W/ 1805-1880 MHz
|
INFINEON[Infineon Technologies AG]
|
| STB7002TR STB7002 7002 |
1.8 GHZ THREE GAIN LEVEL LNA
1.8GHz THREE GAIN LEVEL LNA
1805 MHz - 1880 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
|
ST Microelectronics
http://
STMicroelectronics
意法半导
|
| PTFA182001E |
Thermally-Enhanced High Power RF LDMOS FET 200 W, 1805 - 1880 MHz
|
Infineon Technologies AG
|
