PART |
Description |
Maker |
SST27SF010 SST27SF010-70 SST27SF010-70-3C-NG SST27 |
256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash
|
SST[Silicon Storage Technology, Inc] SST[Silicon Storage Technology Inc]
|
SST27SF010-70-3C-NHE SST27SF010-70-3C-PHE SST27SF0 |
512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash
|
SST[Silicon Storage Technology, Inc]
|
SST29EE512-70-4I-EH SST29LE512-70-4I-EH SST29VE512 |
512 Kbit (64K x 8) page-mode EEPROM 512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 EEPROM 3V, 200 ns, PDSO32 512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 EEPROM 5V, 70 ns, PDSO32 512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 FLASH 3V PROM, 150 ns, PQCC32 512 Kbit (64K x8) Page-Mode EEPROM 512千位4K的8)页模式的EEPROM 512 Kbit (64K x8) Page-Mode EEPROM 512千位4K的8)页模式EEPROM 512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 FLASH 5V PROM, 70 ns, PQCC32 512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 FLASH 5V PROM, 70 ns, PDSO32
|
SILICON STORAGE TECHNOLOGY INC Silicon Storage Technology, Inc.
|
BBS-15 BBS-1/4 BBS-2/10 BBS-1-8/10 BBS-10 BBS-1-6/ |
72-Mbit QDR-II SRAM 2-Word Burst Architecture 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 72-Mbit DDR-II SRAM 2-Word Burst Architecture 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 36-Mbit QDR-II SRAM 4-Word Burst Architecture Fuse 256K (32K x 8) Static RAM 64/256/512/1K/2K/4K x 18 Synchronous FIFOs Low-Voltage 64/256/512/1K/2K/4K/8K x 9 Synchronous FIFOs Neuron® Chip Network Processor 64-Kbit (8K x 8) Static RAM 72-Mbit QDR™-II SRAM 2-Word Burst Architecture 保险
|
NXP Semiconductors N.V.
|
M25P05-AVME6 M25P05-AVMP6 M25P05-AVMF6 M25P05-AVMN |
512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface 4 Mbit Uniform Sector, Serial Flash Memory 4兆位统一部门,串行闪 From old datasheet system
|
http:// STMICROELECTRONICS[STMicroelectronics] ST Microelectronics 意法半导 STMicroelectronics N.V.
|
AT24C04C-SSHM-T AT24C08C-SSHM-T AT24C08C-SSHM-B AT |
I2C-Compatible, (2-wire) Serial EEPROM 4-Kbit (512 x 8), 8-Kbit (1024 x 8)
|
ATMEL Corporation
|
M24512-HR M24512-R M24256-BHR M24256-BR M24512-WDW |
64K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 512 Kbit and 256 Kbit serial I?C bus EEPROM with three Chip Enable lines 512 Kbit and 256 Kbit serial I虏C bus EEPROM with three Chip Enable lines 512 Kbit and 256 Kbit serial I2C bus EEPROM with three Chip Enable lines
|
STMicroelectronics
|
SLA24C04-D SLA24C04-S SLA24C04-D-3 SLA24C04-S-3 Q6 |
4 Kbit 512 x 8 bit Serial CMOS EEPROMs/ I2C Synchronous 2-Wire Bus 4 Kbit 512 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus 4千位512 × 8位串行CMOS EEPROM的,I2C同步2线总线 4 Kbit 512 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus 512 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
|
Siemens Semiconductor Group SIEMENS AG SIEMENS A G
|
M24C02-WMN6P M24C02-WBN6P M24C16-RBN6P M24C16-WMN6 |
Enhanced ESD/latch-up protection, More than 40-year data retention 16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit serial I2C bus EEPROM
|
STMicroelectronics
|
SST31LF043A-70-4E-WI SST31LF041 SST31LF041-300-4C- |
4 Mbit Flash 1 Mbit or 256 Kbit SRAM ComboMemory
|
SST[Silicon Storage Technology, Inc]
|
NAND01GW4A2CZB1 NAND01GW4A2AZB1T NAND512R3A0AN1E N |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆,256兆,512兆位千兆位(x8/x1628 Byte/264字的页面.8V/3V,NAND闪存芯片
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意法半导 STMicroelectronics N.V.
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