| PART |
Description |
Maker |
| NDP6020P NDB6020P |
P-Channel Enhancement Mode Field Effect Transistor24A,-20V0.05ΩP沟道增强型MOS场效应管（漏电流-24A, 漏源电压-20V，导通电0.05Ω 24 A, 20 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
P-Channel Logic Level Enhancement Mode Field Effect Transistor
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
http://
|
| STB55NE06 5405 |
N-Channel Enhancement Mode "SINGLE FEATURE SIZETM " Power MOSFET(N沟道增强模式功率MOSFET) N沟道增强模式“的单一的功能SIZETM”功率MOSFET（不适用沟道增强模式功率MOSFET的）
N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET
From old datasheet system
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
N - CHANNEL ENHANCEMENT MODE ?SINGLE FEATURE SIZE ?POWER MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| TZ404CY TZ404 TZ404BD |
20 V, 8 ohm, N-channel enhancement-mode D-MOS FET
N-CHANNEL ENHANCEMENT-MODE D-MOS FET ULTRA HIGH-SPEED LOW-COST SWITCH
|
Topaz Semiconductor
ETC[ETC]
List of Unclassifed Manufacturers
|
| APM2317AC-TRL |
P-Channel Enhancement Mode MOSFET 4500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
P-Channel Enhancement Mode MOSFET P沟道增强型MOS
|
Anpec Electronics, Corp.
|
| MGSF3455VT1 MGSF3455VT1_D ON1910 MGSF3455VT1-D ON1 |
From old datasheet system
P-CHANNEL ENHANCEMENT?ODE
P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
Low Rds(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors
|
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| STB60NE03L-10 5466 |
N - CHANNEL ENHANCEMENT MODE ?SINGLE FEATURE SIZE ?POWER MOSFET
N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET
From old datasheet system
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
N-CHANNEL Power MOSFET
PC 8C 8#20 SKT RECP -通道增强型“特征尺寸单”功率MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
意法半导
ST Microelectronics
STMicroelectronics N.V.
|
| APM9968C APM9968COC-TR |
20 V, N-channel enhancement mode MOSFET
N-Channel Enhancement Mode MOSFET N沟道增强型MOS
From old datasheet system
|
Anpec Electronics, Corp.
ANPEC[Anpec Electronics Coropration]
ANPEC Electronics Corporation
|
| IXTA60N10T IXTP60N10T |
N-Channel Enhancement Mode Avalanche Rated
60 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
N-Channel Enhancement Mode Avalanche Rated
|
IXYS Corporation
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| ZVP4525Z ZVP4525ZTA ZVP4525ZTC |
250 V, P-channel enhancement mode MOSFET
250V P-CHANNEL ENHANCEMENT MODE MOSFET
|
ZETEX[Zetex Semiconductors]
|
