| PART |
Description |
Maker |
| EIA1213-2P EIB1213-2P |
12.75-13.25GHz, 2W internally matched power FET
|
Excelics Semiconductor
|
| CHA2411-QDG |
20-25GHz Low Noise Amplifier
|
United Monolithic Semic...
|
| MCH4009-TL-H ENA0389A |
RF Transistor 3.5V, 40mA, fT=25GHz, NPN Single MCPH4
|
ON Semiconductor
|
| MGFK36V4045 |
RECTIFIER SCHOTTKY SINGLE 2A 100V 50A-Ifsm 0.79Vf 0.5A-IR SMB 3K/REEL
14.0-14.5GHz BAND 4W INTERNALLY MATCHED GaAs FET
14.0-14.5 GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| SP4916 SP4916NA SP4916NADP SP4916NAMP |
2・5GHz /4512 PRESCALER
25GHz /4512 PRESCALER
|
ZARLINK[Zarlink Semiconductor Inc]
|
| BTA16-600SW3G BTA16-600SW3 |
Triac, 3 Quadrant Internally Isolated, 10 mA I-GT, 16 A I-T(RMS)
600V 16 A, 10mA Igt 3 Quadrant Internally Isolated Triac
|
On Semiconductor
|
| MGFS45V2325 S452325 |
2.3 - 2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带功率30W国内MATCHD砷化镓场效应
From old datasheet system
2.3-2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGFK38V2732 K382732 |
From old datasheet system
12.7~13.2GHZ BAND 6W INTERNALLY MATCHED GAAS FET
12.7-13.2GHz BAND 6W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC38V5694 C385964 MGFC38V5964 |
5.9 - 6.4GHz BAND 6W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.9~ 6.4GHZ BAND 6W INTERNALLY MATCHED GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC39V5258 C395258 |
5.2 - 5.8GHz BAND 8W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.2~5.8GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC42V5964 |
5.9-6.4 GHz Band 16W Internally Matched GaAs FET
5.9 - 6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
