| PART |
Description |
Maker |
| BITSYXB |
Compact and battery operated Comprehensive I/O on a single board
|
List of Unclassifed Manufac...
|
| FR1ZZ-TP FR1ZZP FR1020GP |
1 A, 2000 V, SILICON, SIGNAL DIODE, DO-214AA HSMB, 2 PIN
1 Amp Glass Passivated Rectifier 1200 to 2000 Volts 1 A, 2000 V, SILICON, SIGNAL DIODE, DO-41
|
Micro Commercial Components, Corp.
|
| KMM5362205C2W KMM5362205C2WG |
2M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KMM5364005CSWG |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KMM5364005BSWG |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM44C4005C KM44C4105C KM44C4005CK-6 KM44C4105CK-6 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 60ns
|
Samsung Electronic
|
| KMM5362205C2W |
2MBx36 DRAM Simm Using 1MBx16 And 4MB Quad Cas Edo
|
Samsung Semiconductor
|
| UPC14305 UPC16308 UPC16318 UPC16315 UPC16305 UPC16 |
Useage of Three-Terminal Regulators | User＇s Manual[05/2000] 使用三端稳压器|用户手册[05/2000]
|
Atmel, Corp.
TE Connectivity, Ltd.
NEC, Corp.
|
| KM44C4103C KM44C4003C KM44C4003CK-6 KM44C4003CKL-6 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| 2710288 |
Comprehensive diagnostic possibilities such as breakpoints, individual steps, debugging in libraries, instance debugging
|
PHOENIX CONTACT
|
| ZAPD-21 ZAPD-21-N |
500 MHz - 2000 MHz RF/MICROWAVE COMBINER, 1 dB INSERTION LOSS ROHS COMPLIANT, CASE F14
Power Splitter/Combiner 2 Way-0 50ヘ 500 to 2000 MHz
Power Splitter/Combiner 2 Way-0 50惟 500 to 2000 MHz
Power Splitter/Combiner 2 Way-0 50Ω 500 to 2000 MHz
|
Mini-Circuits
|
