| PART |
Description |
Maker |
| TIM7785-12UL09 |
HIGH POWER P1dB=41.5dBm at 7.7GHz to 8.5GHz
|
Toshiba Semiconductor
|
| TIM7179-4UL |
HIGH POWER P1dB=36.5dBm at 7.1GHz to 7.9GHz
|
Toshiba Semiconductor
|
| TIM7785-25UL |
HIGH POWER P1dB=44.5dBm at 7.7GHz to 8.5GHz
|
Toshiba Semiconductor
|
| TIM6472-8UL09 |
HIGH POWER P1dB=39.5dBm at 6.4GHz to 7.2GHz
|
Toshiba Semiconductor
|
| TIM3742-12UL09 |
HIGH POWER P1dB=41.5dBm at 3.7GHz to 4.2GHz
|
Toshiba Semiconductor
|
| AWT6136 AWT6136RM5P8 AWT6136M5P8 |
450 MHz CDMA 3.4V/29.5dBm Linear Power Amplifier Module
|
ANADIGICS[ANADIGICS, Inc]
|
| AWT6388 AWT6388RM20P9 |
450 MHz - 460 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
450 MHz CDMA 3.4V/29.5dBm Linear Power Amplifier Module
|
ANADIGICS INC
ANADIGICS, Inc
|
| TIM7179-60SL |
IM3=-45 dBc at Pout= 36.5dBm Single Carrier Level
|
Toshiba Semiconductor
|
| TIM5964-16SL-422 |
IM3=-45 dBc at Pout= 31.5dBm G1dB=8.0dB(min) at 5.85GHz to 6.75GHz
|
Toshiba Semiconductor
|
| MCO500-18IO1 MCO500 MCO500-12IO1 MCO500-14IO1 MCO5 |
1800V high power thyristor module
1600V high power thyristor module
1400V high power thyristor module
1200V high power thyristor module
High Power Thyristor Modules
|
IXYS[IXYS Corporation]
|
| FD2000DU-120 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE 高功率，高频率，按包装类
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| RFS1003 PRFS-1003-0009 PRFS-1003-0005 PRFS-1003-00 |
From old datasheet system
5.1-5.9 GHz U-NII Power Amplifier
The RFS1003 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in transmit applications in the 5.1-5.9 ...
|
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
