| PART |
Description |
Maker |
| TIM7179-16UL |
HIGH POWER P1dB=42.5dBm at 7.1GHz to 7.9GHz
|
Toshiba Semiconductor
|
| TIM5964-16UL TIM5964-16UL09 |
HIGH POWER P1dB=42.5dBm at 5.9GHz to 6.4GHz
|
Toshiba Semiconductor
|
| TIM7179-6UL |
HIGH POWER P1dB=38.5dBm at 7.1GHz to 7.9GHz
|
Toshiba Semiconductor
|
| TIM6472-8UL09 |
HIGH POWER P1dB=39.5dBm at 6.4GHz to 7.2GHz
|
Toshiba Semiconductor
|
| TIM5359-8UL |
HIGH POWER P1dB=39.5dBm at 5.3GHz to 5.9GHz
|
Toshiba Semiconductor
|
| AWT6275 AWT6275RM20P8 |
HELP IMT/WCDMA 3.4V/27.5dBm Linear Power Amplifier Module
|
ANADIGICS, Inc
|
| TIM5964-60SL08 |
IM3=-45 dBc at Pout= 36.5dBm Single Carrier Level
|
Toshiba Semiconductor
|
| TIM3742-8SL-341 |
IM3=-45 dBc at Pout= 28.5dBm Single Carrier Level
|
Toshiba Semiconductor
|
| HMC586LC4B |
4 - 8 GHz, 5dBm Pout, -100dBc/Hz SSB Phase Noise@100kHz
WIDEBAND MMIC VCO w/ BUFFER AMPLIFIER, 4.0 - 8.0 GHz
|
Hittite Microwave Corporation
|
| FD1500AV-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
600 A AC/DC CLAMP-ON DMM,TRMS RoHS Compliant: NA
HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| CCF-2 |
Industrial Power, Flameproof (High Temperature Coating Meets EIA RS-325-A Spec), Small Size, High Power Rating, Excellent High Frequency Characteristics, Low Noise, Low Voltage Coefficient, Tape and Reel Packaging
|
Vishay
|
| RFS1003 PRFS-1003-0009 PRFS-1003-0005 PRFS-1003-00 |
From old datasheet system
5.1-5.9 GHz U-NII Power Amplifier
The RFS1003 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in transmit applications in the 5.1-5.9 ...
|
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
