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SGT8810 - N-Channel Enhancement Mode Power Mos.FET

SGT8810_5024691.PDF Datasheet


 Full text search : N-Channel Enhancement Mode Power Mos.FET
 Product Description search : N-Channel Enhancement Mode Power Mos.FET


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From old datasheet system
N-Channel Enhancement Mode Power MOS Transistors(N沟道增强模式快速功率MOS晶体 N沟道增强模式功率MOS晶体管(不适用沟道增强模式快速功率马鞍山晶体管)
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From old datasheet system
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STB55NE06 5405 N-Channel Enhancement Mode "SINGLE FEATURE SIZETM " Power MOSFET(N沟道增强模式功率MOSFET) N沟道增强模式“的单一的功能SIZETM”功率MOSFET(不适用沟道增强模式功率MOSFET的)
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From old datasheet system
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
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STMicroelectronics N.V.
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IXTH40N30NBSP IXTH40N30 IXTM40N30 N-Channel Enhancement Mode MegaMOSFET(最大漏源击穿电00V,导通电.088Ω的N沟道增强B>MegaMOSFET)
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From old datasheet system
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From old datasheet system
Anpec Electronics, Corp.
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ANPEC Electronics Corporation
APT1001RBLC APT1001RSLC APT1001 POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
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Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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