PART |
Description |
Maker |
3DD4460 3DD4460-O-A-N-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD4460 FOR LOW FREQUENCY CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD4460 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
3DD5287-O-A-N-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5287 FOR LOW FREQUENCY CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5287 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
3DD5023-O-HF-N-B 3DD5023 |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5023 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
3DD5044 3DD5044-O-AL-N-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5044 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
IRGPC20K |
INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT
|
IRF[International Rectifier]
|
IRG4RC10KPBF |
INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT
|
International Rectifier
|
IRGPC40K 1982 |
INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT From old datasheet system
|
IRF[International Rectifier]
|
2SA1708S-AN EN3094B 2SC4488T-AN 2SC4488S-AN |
Bipolar Transistor Bipolar Transistor Adoption of FBET, MBIT processes Bipolar Transistor ?0V, ?A, Low VCE(sat) PNP Single PCP
|
ON Semiconductor
|
IRG4BC30KDPBF |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast 1GBT
|
International Rectifier
|
MGY25N120D_D ON1933 MGY25N120D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode From old datasheet system IGBT & DIODE IN TO-264 25 A @ 90 38 A @ 25 1200 VOLTS SHORT CIRCUIT RATED
|
ONSEMI[ON Semiconductor]
|
TC74HC123AF TC74HC123AFN TC74HC123AP HC123 |
Bipolar Transistor; Package/Case:TO-126; Current Rating:500mA; Voltage Rating:300V DUAL RETRIGGERABLE MONOSTABLE MULTIVIBRATOR
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor] http://
|
IRFV360 |
400V Single N-Channel Hi-Rel MOSFET in a TO-258AA package REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR
|
IRF[International Rectifier]
|