PART |
Description |
Maker |
3DD5606 |
CASE-RATED BIPOLAR TRANSISTOR
|
JILIN SINO-MICROELECTRONICS
|
3DD1556-O-A-N-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1556 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
3DD5606-O-Z-N-C |
CASE-RATED BIPOLAR TRANSISTOR 3DD5606 FOR LOW FREQUENCY AMPLIFICATION
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
3DD1555A 3DD1555A-O-A-N-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555A FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
3DD5039 3DD5039-O-HF-N-B |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5039 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
HDMP-1014 HDMP-1012 |
Bipolar Transistor; Collector Emitter Voltage, Vceo:400V; Transistor Polarity:N Channel; Power Dissipation:250W; C-E Breakdown Voltage:400V; DC Current Gain Min (hfe):10; Collector Current:50A; Package/Case:TO-3 Phase Lock Loop (PLL) IC; Number of Circuits:1; Package/Case:14-DIP; Mounting Type:Through Hole 4Low成本千兆速率发接收芯片
|
Agilent(Hewlett-Packard)
|
IRG4ZH71KD |
Surface Mountable Short Circuit Rated UltraFast IGBT (INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)
|
IRF[International Rectifier]
|
JANTXV2N7224 JANTX2N7224 2N7224 IRFM150 |
HEXFET Transistor(HEXFET 晶体 的HEXFET晶体管(之HEXFET晶体管) REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET? TRANSISTOR 100V Single N-Channel Hi-Rel MOSFET in a TO-254AA package
|
International Rectifier, Corp. IRF[International Rectifier]
|
BUZ100S Q67040-S4001-A2 |
High Speed CMOS Logic 7-Stage Binary Ripple Counter 14-TSSOP -55 to 125 SIPMOS功率晶体管(N通道增强模式雪崩额定dv / dt的评价) SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated) SIPMOS ? Power Transistor
|
SIEMENS AG Siemens Semiconductor Group Infineon http://
|
BUZ104S Q67040-S4007-A2 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175∑C operating temperature) 14 A, 55 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 SIPMOS ? Power Transistor SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature) SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175°C operating temperature)
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group] Infineon
|