| PART |
Description |
Maker |
| DTD713ZM DTD713ZE |
200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors)
|
Rohm
|
| DTB713ZM DTB713ZE |
-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)
|
http://
ROHM[Rohm]
|
| 2SA1385-Z |
Low VCE(sat):VCE(sat)=-0.18 V TYP.Collector-base voltage VCBO -60 V
|
TY Semiconductor Co., Ltd
|
| 2SB1115 |
World standard miniature package. Low VCE(sat): VCE(sat)=-0.2V at 1A
|
TY Semiconductor Co., Ltd
|
| EN8210 |
Bipolar Transistor, -30V, -2A, Low VCE(sat), PNP Single MCPH3
|
ON Semiconductor
|
| EN6480C |
Bipolar Transistor (-)30V, (-)1.5A, Low VCE(sat), (PNP)NPN Single MCPH6
|
ON Semiconductor
|
| NSS20600CF8T1G NSS20600CF8 |
20V 6A LOW VCE(sat) PNP High Current Transistor ChipFET™
20 V, 7.0 A, Low VCE(sat) PNP Transistor(20V, 7.0A, 低VCE(sat) PNP晶体
|
ON Semiconductor
|
| NSV40200LT1G NTB75N03L09T4G NSV1C300ET4G NTD2955PT |
40 V, 4.0 A, Low VCE(sat) PNP Transistor
Power MOSFET 75 Amps, 30 Volts
100 V, 3.0 A, Low VCE(sat) PNP Transistor
|
ON Semiconductor
|
| NSS40600CF8T1G_07 NSS40600CF8T1G NSS40600CF8T1G07 |
40 V, 7.0 A, Low VCE(sat) PNP Transistor(40V, 7.0A, 低VCE(sat) PNP晶体
|
ONSEMI[ON Semiconductor]
|
| TSD882S |
Low Vce(sat) NPN Transistor 低Vce（sat）NPN晶体
|
Taiwan Semiconductor Co., Ltd.
|
| ENA1756A |
Bipolar Transistor 30V, 1.5A, Low VCE(sat) NPN Dual CPH6
|
ON Semiconductor
|
| IXGT31N60D1 IXGH31N60D1 |
Ultra-Low VCE(sat) IGBT with Diode(VCES00V，VCE(sat).7V的绝缘栅双极晶体带二极管)) 60 A, 600 V, N-CHANNEL IGBT, TO-247AD
Ultra-Low V IGBT with Diode
|
IXYS, Corp.
IXYS Corporation
|
