| PART |
Description |
Maker |
| M6MGT641S8BKT M6MGB641S8BKT |
Memory>MCP(Multi Chip Package)>S-µMCP(Stacked micro MCP)
|
Renesas
|
| K522H1HACF-B050 |
MCP Specification
|
Samsung semiconductor
|
| WED2ZLRSP01S-BC |
NBL SSRAM MCP NBL的的SSRAM MCP
|
Electronic Theatre Controls, Inc.
|
| K5D5657DCM-F015 K5D5657DCM-F0CL |
MCP Specification of 256Mb NAND and 256Mb Mobile SDRAM
MCP / 256Mb NAND and 256Mb Mobile SDRAM
|
SAMSUNG[Samsung semiconductor]
Samsung Electronics
|
| DS42546 AM29DL163D |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
From old datasheet system
MCP Flash Memory and SRAM
|
AMD[Advanced Micro Devices]
|
| S72WS-N S72WS512NEG-LY S72WS512NFG-LY S72WS512NFG- |
Based MCP/PoP Products 基于MCP流行产品
Based MCP/PoP Products SPECIALTY MEMORY CIRCUIT, PBGA137
|
Spansion Inc.
Spansion, Inc.
|
| F4655-1305 |
High-Speed Response MCP Assembly Ideal for High Resolution TOF-MS Detector Incorporates a Two-Stage MCP with 4 μm Channel Diameter
High-Speed Response MCP Assembly Ideal for High Resolution TOF-MS Detector Incorporates a Two-Stage MCP with 4 レm Channel Diameter
|
Hamamatsu Corporation
|
| S71GL032A40BFI0B2 S71GL064A80BAI0B3 S71GL064A80BAI |
Stacked Multi-Chip Product (MCP) Flash Memory and RAM SPECIALTY MEMORY CIRCUIT, PBGA56
DIODE ZENER 200MW 5.1V 1005 SPECIALTY MEMORY CIRCUIT, PBGA56
DIODE ZENER 200MW 9.1V 1005 SPECIALTY MEMORY CIRCUIT, PBGA56
Stacked Multi-Chip Product (MCP) Flash Memory and RAM 堆叠式多芯片产品（MCP）的闪存和RAM
DIODE ZENER 200MW 4.7V 1005
INDUCTOR POWER 3.3UH 5.4A SMD
INDUCTOR,TOROID,HORIZONTAL, 22.0 uH,7.0 IDC,0.015 OHM,
|
Spansion, Inc.
Spansion Inc.
|
| F2223-21SH |
MCP ASSEMBLY
|
Hamamatsu Corporation
|
| MB84VD22181FM-70 MB84VD22191FM-70 |
2-Stacked MCP
|
Fujitsu
|
| WS512K32BV-XG2XE WS512K32NBV-XH2XE |
SRAM MCP SRAM的MCP
|
IDEC, Corp.
|
| S72WS256NEEBAW4Y3 S72WS256NEEBFWU7 S72WS256NEEBFWU |
Based MCP/PoP Products
|
SPANSION[SPANSION]
|
