| PART |
Description |
Maker |
| EM42AM1684LBA-75FE EM42AM1684LBA-7FE EM42AM1684LBA |
512Mb (8M】4Bank】16) Double DATA RATE SDRAM
512Mb (8M隆驴4Bank隆驴16) Double DATA RATE SDRAM
|
Eorex Corporation
|
| EM42BM3284LBA-8FE EM421M3284LBA-75FE EM421M3284LBA |
512Mb (4M×4Bank×32) Double DATA RATE SDRAM
512Mb (4M?4Bank?32) Double DATA RATE SDRAM
512Mb (4M】4Bank】32) Double DATA RATE SDRAM
|
http://
List of Unclassifed Manufacturers
ETC[ETC]
Eorex Corporation
|
| HYB39S512400AT HYB39S512400ATL HYB39S512XX0ATL HYB |
SDRAM Components - 512Mb (64M x 8) PC133 3-3-3
SDRAM Components - 512Mb (128M x 4) PC133 3-3-3
SDRAM Components - 512Mb (32M x 16) PC133 3-3-3
512-Mbit Synchronous DRAM
|
INFINEON[Infineon Technologies AG]
|
| TS512MJFV30 |
512MB USB2.0 JetFlash垄芒V30
512MB USB2.0 JetFlash?V30
|
Transcend Information. Inc.
|
| HYS72D32000GU-7-A HYS64D32000GU-7-A HYS72D64020GU- |
256MB (32Mx64) PC2100 1-bank
512MB (64Mx72) PC2100 2-bank
512MB (64Mx64) PC2100 2-bank
512MB (64Mx72) PC1600 2-bank
256MB (32Mx72) PC1600 1-bank End-of-Life
512MB (64Mx64) PC1600 2-bank 12MB的（64Mx64）PC1600 2银行
256MB (32Mx72) PC2100 1-bank 56MB的（32Mx72）PC2100 1银行
|
Infineon Technologies AG
|
| TS512MJF110 |
512MB USB2.0 JetFlash垄芒110
512MB USB2.0 JetFlash?10
|
Transcend Information. Inc.
|
| HFDOM40C-256S2 HFDOM40C-032S1 HFDOM40C-032S2 HFDOM |
40Pin Flash Disk Module Min.8MB ~ Max.512MB, True IDE Interface Mode, 3.3V / 5.0V Operating 40Pin盘模块Min.8MBMax.512MB，真正的IDE接口模式.3 / 5.0V工作
40Pin Flash Disk Module Min.8MB ~ Max.512MB, True IDE Interface Mode, 3.3V / 5.0V Operating 40Pin盘模块Min.8MBMax.512MB，真正的IDE接口模式3.3 / 5.0V工作
|
Hanbit Electronics Co.,Ltd.
Hanbit Electronics Co., Ltd.
|
| EBS51RC4ACFC-7A EBS51RC4ACFC EBS51RC4ACFC-75 |
512MB Registered SDRAM DIMM 512MB的注册SDRAM的内
512MB Registered SDRAM DIMM 64M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| HYB25D512160BE-5 HYB25D512800BC-5 HYB25D512800BE-5 |
DDR SDRAM Components - 512Mb (32Mx16) DDR400 (3-3-3)
DDR SDRAM Components - 512Mb FBGA (64Mx8) DDR400 (3-3-3)
DDR SDRAM Components - 512Mb (64Mx8) DDR400 (3-3-3)
DDR SDRAM Components - 512Mb FBGA (64Mx8) DDR333 (2.5-3-3)
DDR SDRAM Components - 512Mb (32Mx16) DDR333 (2.5-3-3)
DDR SDRAM Components - 512Mb FBGA (128Mx4) DDR333 (2.5-3-3)
DDR SDRAM Components - 512Mb (64Mx8) DDR333 (2.5-3-3)
DDR SDRAM Components - 512Mb (128Mx4) DDR266A (2-3-3)
|
Infineon
|
| HYS64V6422 HYS64V64220GBDL-75-D HYS64V64220GBDL-8- |
512MB PC133 (2-2-2) 2-bank. FBGA based. available 3Q02 12MB的PC133的（2-2-2银行FBGA封装为基础？可Q02
144 pin SO-DIMM SDRAM Modules 144引脚的SO - DIMM内存模块
SDRAM Modules - 512MB PC133 (2-2-2) 2-bank, FBGA based; End-of-Life
|
INFINEON[Infineon Technologies AG]
|
| NX3L2467 NX3L2467HR NX3L2467GU NX3L2467PW |
Dual low-ohmic double-pole double-throw analog switch
|
NXP Semiconductors
|
| 1300940223 |
Standard Duty Support Grip, Double Eye, Closed Mesh, Double Weave
|
Molex Electronics Ltd.
|
