| PART |
Description |
Maker |
| 27C256 27C256-10 27C256-10EL 27C256-10EP 27C256-10 |
256K (32K x 8) CMOS EPROM
256K (32K x 8) CMOS EPROM 256K2K的8）的CMOS存储
DIODE SCHOTTKY 150V 60A TO247AC
CAPACITOR 1500UF 80V ELECT TSHA
CAP 270UF 400V ELECT TS-ED
From old datasheet system
256K (32x8) CMOS EPROM
|
YEONHO Electronics Co., Ltd.
Microchip Technology, Inc.
Microchip Technology Inc.
MICROCHIP[Microchip Technology]
|
| LH53259 LH53259D LH53259N LH53259T |
CMOS 256K(32K X 8) Mask-Programmable ROM
CMOS 256K (32K x 8) MROM
|
SHARP[Sharp Electrionic Components]
Sharp Corporation
|
| HN27C256G HN27C256G-17 HN27C256G-25 HN27C256G-20 |
256K (32K x 8-bit) UV EPROM, 200ns
256K (32K x 8-bit) UV EPROM, 250ns
32768-WORD x 8-BIT CMOS UV ERASABLE AND PROGRAMMABLE ROM
256K (32K x 8-bit) UV EPROM, 170ns
|
Hitachi Semiconductor
|
| AT28C256-15PI AT28C256-15PC AT28C256E AT28C256E-15 |
256K 32K x 8 Paged CMOS E2PROM
256K (32K x 8) Paged CMOS
From old datasheet system
|
ATMEL[ATMEL Corporation]
|
| HN58C257A HN58C256AFP10 HN58C256AP10 |
256 k EEPROM (32-kword ×8-bit)(256k EEPROM (32k×8)
IC-SM-256K CMOS EEPRM
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
|
Hitachi,Ltd.
|
| UPD43256B00 UPD43256B-XXL UPD43256B-XXLL UPD43256B |
32K X 8 STANDARD SRAM, 70 ns, PDSO28
32K X 8 STANDARD SRAM, 100 ns, PDSO28
256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT
256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT
|
NEC
|
| CAT5111PI-00 CAT5111P-00 CAT5111U-00TE13 CAT5111P- |
FLEx18™ 3.3V 32K/64K/128K/256K/512K x 18 Synchronous Dual-Port RAM
3.3V 16K/32K x 36 FLEx36™ Asynchronous Dual-Port Static
DIGITAL POTENTIOMETER|CMOS|DIP|8PIN|PLASTIC
FLEx36™ 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM
FLEx36™ 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM 数字电位器|的CMOS |专科| 8引脚|塑料
DIGITAL POTENTIOMETER|CMOS|TSSOP|8PIN|PLASTIC 数字电位器|的CMOS | TSSOP封装| 8引脚|塑料
DIGITAL POTENTIOMETER|CMOS|SOP|8PIN|PLASTIC 数字电位器|的CMOS |专科| 8引脚|塑料
|
Analog Devices, Inc.
|
| 87C256-20FA |
256K (32K x 8) CMOS UV Erasable PROM
|
Signetics
|
| 27C256-90 27C256-45 |
256K-BIT [32K x 8] CMOS EPROM
|
Macronix International Co., Ltd.
|
| LH52B256T-100LL LH52B256T-70LL LH52B256T-90LL LH52 |
CMOS 256K (32K x 8) Static RAM 的CMOS 256K2K的8）静态RAM
|
Sharp, Corp.
Sharp Corporation
Sharp Electrionic Components
http://
|
| 27C256-15FA 27C256A 27C256 27C256D 27C256-12FA 27C |
2-7 V, 256K-bit CMOS EPROM (32Kx8)
256K-bit CMOS EPROM (32K x 8)
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| 28C256ASC-1 28C256ASC-2 28C256ASC-3 28C256ASC-4 28 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
|
Turbo IC
|
